To
meet the requirements of environmental friendliness,
high-performance
lead-free piezoelectric materials have become important materials
for next-generation electronic devices. Here, lead-free and potassium-free
NaNbO3 (NN)-based ceramics with high piezoelectric (d
33 = 361 ± 10 pC/N) and dielectric (εr = 4500) properties were obtained by tolerant preparation
techniques. The excellent piezoelectric and dielectric properties
can be attributed to the relaxor morphotropic phase boundaries (R–MPB)
and coexisting domain regions, which are beneficial in lowering the
free energy and greatly improving the dielectric response and domain
switching capability. Furthermore, the d
33 of NaNbO3-10Ba(Ti0.7Sn0.3)O3-1.5NaSbO3 (NN-10BTS-1.5NS) ceramics can be maintained
at 350 pC/N over the range of 25–80 °C with a change rate
of less than 10%, exhibiting excellent temperature stability. Based
on a series of in situ characterizations, the variations of the phase
and domain structures of NN-based relaxor piezoelectric ceramics with
temperature are clearly demonstrated. This work not only proposes
new materials for sensors and actuators but also provides an excellent
strategy for designing high-performance piezoelectric ceramics through
phase and domain engineering.