A theoretical model to compute the localized electronic states at the surface of hexagonal structures with different coupling orbitals

Belayadi, Adel; Bourahla, Boualem

doi:10.1016/j.susc.2018.04.005

Cited by 10 publications

(4 citation statements)

References 23 publications

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“…These wave functions resolve the scattering problem in reciprocal space, separately. Then the Green's function formalism [42][43][44][45][46] incolves the scattering matrices S mn = S mn −K + S mn +K with S mn…”

Section: Data Availability Statementmentioning

confidence: 99%

Gate-Tunable Asymmetric Quantum Dots in Graphene-Based Heterostructures: Pure Valley Polarization and Confinement

Belayadi,

Vasilopoulos

2024

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We explore the possibility of attaining valley-dependent tunnelling and confinement using proximity-induced spin-orbit couplings (SOCs) in graphene-based heterostructures. We consider gate-tunable asymmetric quantum dots (AQDs) on graphene heterostructures and exhibiting a C3v and/or C6v symmetry. By employing a tight-binding model, we explicitly reveal a pure valley confinement and valley signal in AQDs by streaming the valley local density, leading to valley-charge separation in real space. The confinement of the valley quasi-bound states is sensitive to the locally induced SOCs and to the spatial distribution of the induced AQDs; it is also robust against on-site disorder. The adopted process of attaining a pure valley-Hall conductivity and confinement with zero charge currents is expected to provide more options towards valley-dependent electron optics.

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Section: Data Availability Statementmentioning

confidence: 99%

Gate-Tunable Asymmetric Quantum Dots in Graphene-Based Heterostructures: Pure Valley Polarization and Confinement

Belayadi,

Vasilopoulos

2024

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“…1 [55][56][57][58][59][60]. More precisely, the evanescent ones are considered only in the case of computing bound states which is not the case of our paper.…”

Section: ) Ismentioning

confidence: 99%

A spin modulating device, tuned by the Fermi energy, in honeycomb-like substrates periodically stubbed with transition-metal-dichalkogenides

Belayadi¹,

Vasilopoulos²

2022

Nanotechnology

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We investigate spin transport through graphene-like substrates stubbed vertically with transition-metal-dichalkogenides (TMDs). A tight-binding model is used based on a graphene-like Hamiltonian that includes diﬀerent types of spin-orbit coupling (SOC) terms permitted by the C3v symmetry group in TMDs/graphene-like heterostructures. The results show a spin modulation obtained by tuning the strength and sign of the Fermi energy EF and not by varying the SOC strength as is mainly the case of Datta and Das. The spin conductance is directly controlled by the value of EF . In addition, a perfect electron-spin modulation is obtained when a vertical strain is introduced. In this case, the spin conductance exhibits a strong energy dependence. The results may open the route to a combination of graphene-like substrates with TMD stubs and the development of spin-transistor devices controlled by the Fermi energy rather than the SOC strength.

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“…The PFMT is said to be a powerful mathematical tool that links and connect the electronical conductance to the scattering matrix. Thus, the PFMT method has mainly been adopted by many scientists to study the disorder systems [26,27]. Lately; at the surface in metallic structures, it was used to determine the localized electronic states [15].…”

Section: Introductionmentioning

confidence: 99%

Consideration of electronic mean heat transport via a low dimension system

Aicha,

Sakher,

Rachid

et al. 2024

TAPR

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The object of research is the complex realm of energy localization and coherent ballistic electronic transport within low-dimensional silicon quantum wires, specifically those doped with germanium atoms. Unlike their three-dimensional counterparts, low-dimensional systems exhibit unique electronic transport behaviors, necessitating novel analytical approaches for a comprehensive understanding. The core of this investigation leverages the Phase Field Matching Theory (PMFT) and the tight-binding (TB) approximation, sophisticated methodologies that enable a deep dive into the quantum mechanical nuances of these systems. Through this lens, we examine the intricate dynamics of dispersion relationships, phase factors, group velocities, and notably, the impact of defects introduced by the germanium doping. This research meticulously analyzes how these defects affect electronic and thermal conductivities, along with densities of states, offering new insights into the role of Fano resonances in the fluctuation of transmission and reflection spectra. These resonances, we find, are crucially dependent on the nature of the defects, their configuration, and the electronic parameters in their vicinity, underscoring the nuanced interplay between material composition and electronic properties in low-dimensional systems. The implications of our findings extend far beyond the theoretical. They pave the way for significant advancements in nanotechnology and the design of electronic devices, highlighting the potential for creating more efficient, high-performance components. Furthermore, this work proposes a framework for developing non-destructive testing methodologies that could revolutionize material science by enabling the precise analysis of defects in low-dimensional systems without causing damage. This is particularly critical for the ongoing development of materials with optimized properties for various applications, from electronics to energy storage. In essence, this research not only enriches our understanding of the physics governing low-dimensional systems but also offers practical insights into leveraging these properties for technological innovation. By bridging the gap between theoretical physics and material science, our study sets the stage for the next generation of electronic components and non-destructive evaluation techniques, marking a significant step forward in the application of quantum mechanics to real-world challenges.

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A theoretical model to compute the localized electronic states at the surface of hexagonal structures with different coupling orbitals

Cited by 10 publications

References 23 publications

Gate-Tunable Asymmetric Quantum Dots in Graphene-Based Heterostructures: Pure Valley Polarization and Confinement

Gate-Tunable Asymmetric Quantum Dots in Graphene-Based Heterostructures: Pure Valley Polarization and Confinement

A spin modulating device, tuned by the Fermi energy, in honeycomb-like substrates periodically stubbed with transition-metal-dichalkogenides

Consideration of electronic mean heat transport via a low dimension system

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