A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation

Abstract

Using self-consistent two dimensional numerical simulation (LASTIP), the layer structure of the laser diodes is optimized. A ridge waveguide structure with GaInAdGaAs and GaInAs/GaInAsP active regions has been simulated. The influence of the well numbers and waveguide thicknesses on the threshold current is studied. Compared to GaInAdGaAs, GalnAs/GalnAsP active region suffers from larger spread in the threshold current due to nonuniformities in the carrier density with increasing quantum wells. Simulations have been performed for different temperatures and at different cavity lengths.