A theoretical study of two novel SiC and GaN ultraviolet avalanche drift detectors with front-illumination

Yuan, Jun; Ni, Wei Jiang; Huang, Xiaojin; Xu, Mingzhu; Zhang, J. W.; Niu, XJ; Li, M. S.; Dou, Juan

doi:10.1109/ifws.2017.8246018

Cited by 1 publication

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“…Silicon Carbide (SiC) has proven to be one of the most promising candidates for the fabrication of ultraviolet (UV) sensitive detectors, intermediate band solar cells and light-emitting diodes (LEDs) owing to its extraordinary properties, such as wide bandgap, high breakdown electric field and excellent physical stability under extreme conditions [1][2][3][4][5][6]. In order to expand the application range and improve the cost effectiveness, it's very important to enhance device efficiency.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Broadband Antireflective Sub-Micro Structures on 4H-SiC by Mesh Patterning Etching

Yuan¹,

Schlichting²,

Erlbacher³

2018

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An approach to fabricating pseudoperiodic antireflective subwavelength structures on silicon carbide by using modified resist as etching mask is demonstrated. The etched submicron structure is a mesh-trenched pattern thus as the so called "mesh patterning etching". The mesh patterning process is more time-efficient than the e-beam lithography or nanoimprint lithography process. The influences of the reactive-ion etching conditions and post bake temperature of the resist film to the sub-micron structure profile and its corresponding surface reflectance have been systematically investigated. Under optimal experimental conditions, the average reflectance of the silicon carbide in the range of 390-800 nm is dramatically suppressed from 40% to around 8% after introducing the mesh patterning sub-micro structures.

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