A theoretical study on Sb2S3 solar cells: The path to overcome the efficiency barrier of 8%

Courel, Maykel; Jiménez, Thalía; Arce‐Plaza, Antonio; Seuret-Jiménez, D.; Morán-Lázaro, Juan Pablo; Sánchez-Rodríguez, F.J.

doi:10.1016/j.solmat.2019.110123

Cited by 40 publications

(3 citation statements)

References 43 publications

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“…There are theoretical reports in literature corresponding to ETLs in Sb 2 S 3 solar cells in addition to the experimental work. In a theoretical simulation study about the solar cell device of the architecture glass/Au/Sb 2 S 3 /CdS/ZnO/ZnO:Al, Courel et al [122] reported that 11.8% PCE is attainable by improving Sb 2 S 3 bulk and CdS/Sb 2 S 3 interface quality. Furthermore, they proposed that by paying particular attention to the series and shunt resistances in the cell, the PCE could increase to 18.4%.…”

Section: Electron Transport Layersmentioning

confidence: 99%

Wide Bandgap Sb₂S₃ Solar Cells

Shah

Chen

Khalaf

et al. 2021

Adv Funct Materials

125

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The wide bandgap Sb 2 S 3 is considered to be one of the most promising absorber layers in single-junction solar cells and a suitable top-cell candidate for multi-junction (tandem) solar cells. However, compared to mature thinfilm technologies, Sb 2 S 3 based thin-film solar cells are still lagging behind in the power conversion efficiency race, and the highest of just 7.5% has been achieved to date in a sensitized single-junction structure. Furthermore, to break single junction solar cell based Shockley-Queisser (S-Q) limits, tandem devices with wide bandgap top-cells and low bandgap bottom-cells hold a high potential for efficient light conversion. Though matured and desirable bottom-cell candidates like silicon (Si) are available, the corresponding mature wide bandgap top-cell candidates are still lacking. Hence, a literature review based on Sb 2 S 3 solar cells is urgently warranted. In this review, the progress and present status of Sb 2 S 3 solar cells are summarized. An emphasis is placed mainly on the improvement of absorber quality and device performance. Moreover, the low-performance causes and possible overcoming mechanisms are also explained. Last but not least, the potential and feasibility of Sb 2 S 3 in tandem devices are vividly discussed. In the end, several strategies and perspectives for future research are outlined.

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Section: Electron Transport Layersmentioning

confidence: 99%

Wide Bandgap Sb₂S₃ Solar Cells

Shah

Chen

Khalaf

et al. 2021

Adv Funct Materials

125

View full text Add to dashboard Cite

show abstract

“…Additionally, Sb 2 S 3 presents numerous advantages including readily available raw materials, remarkable stability in the face of moisture and temperature, a direct bandgap of 1.62 eV, high absorption coefficient of 10 5 cm −1 , non-toxicity, carrier mobility of 9.8 cm 2 /Vs and 10 cm 2 /Vs for electrons and holes respectively, and p-type conductivity [8][9][10][11]. The reported efficiency of numerically simulated Sb 2 S 3 absorber based solar cell is 20.6% [12] and experimental efficiencies for single ETL solar cell are 6.18% [13], 7.5% [14], and 5.4% [15]. The experimental reported efficiency of Sb 2 S 3 absorber layer based double ETL solar cell is 5.3% [16].…”

Section: Introductionmentioning

confidence: 93%

Tri-chalcogenides (Sb2S3/Bi2S3) solar cells with double electron transport layers: design and simulation

Saifee,

Latief,

Ali

et al. 2024

Discov Energy

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To make technology accessible to everyone, it is essential to focus on affordability and durability of the devices. Antimony trisulfide (Sb2S3) and bismuth (III) sulfide (Bi2S3) are low-cost and stable materials that are commonly used in photovoltaic devices due to their non-toxic nature and abundance. These materials are particularly promising for photovoltaic applications as they are effective light-absorbing materials. In this study, we utilized the Solar cell Capacitance Simulator- One-Dimensional (SCAPS-1D) software to investigate the parameters of a double electron transport layer (ETL) solar cell based on Sb2S3/ Bi2S3. The parameters examined included thickness of the absorber layer, overall defect density, density of acceptors, radiative recombination coefficient, series and shunt resistance, and work function of the back contact. The solar cell structure studied was FTO/SnO2/CdS/ Sb2S3 and Bi2S3/Spiro-OMeTAD/Au. By incorporating a SnO2 electron transport layer (ETL) into the double ETL structure of Sb2S3 and Bi2S3 solar cells, we observed a significant enhancement in the power conversion efficiency (PCE). Specifically, the PCE increased to 19.71% for the Sb2S3 solar cell and 24.05% for the Bi2S3 solar cell. In contrast, without SnO2, the single ETL-based CdS solar cell achieved a maximum PCE of 18.27 and 23.05% for Sb2S3 and Bi2S3, respectively.

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“…The valence and conduction band edges of each layer relative to the vacuum level (in eV) before contact are also illustrated in figure 1. The parameters concerning the physical properties of the FTO, TiO 2 , CsPbI 3 and Sb 2 S 3 layers used for the calculation of the reference device have been extracted from previously published literature [14,[23][24][25][26][27] and are presented in table S1 (supplementary material). In the simulation process, except for the study variants, the other parameters default to be consistent with the reference device in table S1.…”

Section: Simulation Modelmentioning

confidence: 99%

The working mechanism of CsPbI₃/Sb₂S₃ heterojunction perovskite solar cells

Gu,

Wang,

Yang

et al. 2023

J. Phys. D: Appl. Phys.

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Recently, significant breakthroughs in power conversion efficiencies (PCEs) have been obtained for 3D CsPbI3-based perovskite solar cells. In the present work, a novel heterojunction structure with 1D Sb2S3 as the hole transport layer was designed and investigated using solar cell capacitance simulator simulation software. The influence of thickness, band offset, conduction type, doping concentration, bulk and interface defect densities on the performances of the devices were analyzed. The PCE of the devices increases with the increase in the thicknesses of the CsPbI3 and Sb2S3 layers. The p-type conduction of the CsPbI3 under-layer has more advantages with regard to broadening of the doping density, and the higher acceptor density in the Sb2S3 over-layer contributes to the improvement of the performance of the device. In addition, the device performance is more sensitive to the defect density at the CsPbI3/Sb2S3 interface than that in the Sb2S3 over-layer. Finally, a PCE over 20% is obtained for the device with optimal parameters. These simulation results demonstrate the tremendous potential of a novel 3D/1D CsPbI3/Sb2S3 heterojunction design for high-performance and high-stability devices.

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A theoretical study on Sb2S3 solar cells: The path to overcome the efficiency barrier of 8%

Cited by 40 publications

References 43 publications

Wide Bandgap Sb₂S₃ Solar Cells

Wide Bandgap Sb₂S₃ Solar Cells

Tri-chalcogenides (Sb2S3/Bi2S3) solar cells with double electron transport layers: design and simulation

The working mechanism of CsPbI₃/Sb₂S₃ heterojunction perovskite solar cells

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A theoretical study on Sb2S3 solar cells: The path to overcome the efficiency barrier of 8%

Cited by 40 publications

References 43 publications

Wide Bandgap Sb2S3 Solar Cells

Wide Bandgap Sb2S3 Solar Cells

Tri-chalcogenides (Sb2S3/Bi2S3) solar cells with double electron transport layers: design and simulation

The working mechanism of CsPbI3/Sb2S3 heterojunction perovskite solar cells

Contact Info

Product

Resources

About

Wide Bandgap Sb₂S₃ Solar Cells

Wide Bandgap Sb₂S₃ Solar Cells

The working mechanism of CsPbI₃/Sb₂S₃ heterojunction perovskite solar cells