A thermal model for static current characteristics of AlGaN∕GaN high electron mobility transistors including self-heating effect

Abstract

A thermal model of AlGaN / GaN high electron mobility transistors ͑HEMTs͒ has been developed based on a quasi-two-dimensional numerical solution of Schrödinger's equation coupled with Poisson's equation. The static current characteristics of HEMT devices have been obtained with the consideration of the self-heating effect on related parameters including polarization, electron mobility, saturation velocity, thermal conductivity, drain and source resistance, and conduction-band discontinuity at the interface between AlGaN and GaN. The simulation results agree well with our experimental data. It has also been demonstrated that the reduction of the saturation drain current at high power dissipation is primarily due to the decrease of electron mobility in the channel. The proposed model is valuable for predicting and evaluating the performance of different device structures and packages for various applications.

The Influence of AlGaN Barrier-Layer Thickness on the GaN HEMT Parameters for Space Applications

“…Choosing the model of electron transporting, we took account balance between speed of calculations and sufficient accuracy. Nowadays it is clear that calculations of the drift-diffusion model cannot satisfy the demands of practice in the calculations of submicron transistors [10][11][12][13][14][15][16]. Accounting of the results by the Monte Carlo method in conjunction with the existing hydrodynamic model is the best choice in many cases, in our opinion.…”

Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)

“…It results in drop of carrier mobility and causes the reduction of drain current to a large extent. This effect has been reported earlier and it has great impact on performance characteristics of HEMT [4] and is generally referred to as self-heating. There is a negative slope is observed in the saturation region of drain characteristics due to self-heating effect.…”

“…The dependence of polarization with respect to temperature variations is predicted to be very small [4]. Hence the temperature dependent polarization effects are neglected.…”

Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations

“…2,8 Among all the III-nitrides, AlGaN is very important because of its applications in high power and high mobility electronic devices. 9,10 The major advantages of the AlGaN alloys are its compatibility of tuning the direct band gap in between the energy ranges from 3.47 to 6.2 eV. Thus, AlGaN ternary alloys with different composition plays an important role in UV and deep-UV optoelectronic device applications.…”