A thermodynamic reassessment of the Al-As-Ga system

Ch, Li; Li, J. B.; Du, Zhenmin; Lü, Lei; Zhang, W.

doi:10.1361/105497101770339265

Cited by 13 publications

(21 citation statements)

References 22 publications

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“…The authors in ref. 131 applied the regular solution model to describe the thermodynamic properties of the solid phase in the system AlAs-GaAs. The same model was used to describe the solidus curve in the system AlAs-InAs.…”

Section: Discussionmentioning

confidence: 99%

“…There exist many studies that describe the liquidus-solidus equilibria and the extrapolated miscibility gaps for the MAs-M 0 As systems where M, M 0 = Al, Ga or In. [131][132][133][134][135][136][137] But nevertheless, the critical parameters of the miscibility gaps are not satisfactory, and sometimes the proposed values are spread over a range of hundreds of degrees, depending on the input data and the models employed.…”

Section: Introductionmentioning

confidence: 99%

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Ab initio prediction of low-temperature phase diagrams in the Al–Ga–In–As system, MAs–M′As (M, M′ = Al, Ga or In) and AlAs–GaAs–InAs, via the global study of energy landscapes

Pentin

Schön

Jansen

2010

Phys. Chem. Chem. Phys.

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Traditionally, the determination of phase diagrams has followed the inductive paradigm, where experimental observations provide the phase boundaries in more or less detail and phenomenological and semi-phenomenological models are employed to interpolate between the experimental data points, and by extrapolation to predict the shape of the phase boundaries in experimentally inaccessible regions. Over the past fifteen years, a new methodology has been developing, the aim of which is the prediction, determination and validation of phase diagrams in chemical systems without any recourse to experimental information. The foundation stone of this deductive approach is the global study of the energy landscape of the chemical system. In this study, we present an application of this approach to the prediction of the low-temperature part of the phase diagram of the quasi-ternary semiconductors (Al, Ga, In)As.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ab initio prediction of low-temperature phase diagrams in the Al–Ga–In–As system, MAs–M′As (M, M′ = Al, Ga or In) and AlAs–GaAs–InAs, via the global study of energy landscapes

Pentin

Schön

Jansen

2010

Phys. Chem. Chem. Phys.

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“…Dash-dotted black line: solid–liquid equilibrium curve for the Al–Ga–As mixture, calculated from data in ref at 610 °C. Solid green line: plot of eq with ε = 497.…”

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confidence: 99%

“…A possible explanation is that the growth rate r might not be strictly constant. Actually, adding Al to the ternary liquid depresses the solubility of As, , which potentially speeds up growth.…”

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confidence: 99%

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory

et al. 2016

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The growth of III-III-V axial heterostructures in nanowires via the vapor-liquid-solid method is deemed to be unfavorable because of the high solubility of group III elements in the catalyst droplet. In this work, we study the formation by molecular beam epitaxy of self-catalyzed GaAs nanowires with AlxGa1-xAs insertions. The composition profiles are extracted and analyzed with monolayer resolution using high-angle annular dark-field scanning transmission electron microscopy. We test successfully several growth procedures to sharpen the heterointerfaces. For a given nanowire geometry, prefilling the droplet with Al atoms is shown to be the most efficient way to reduce the width of the GaAs/AlxGa1-xAs interface. Using the thermodynamic data available in the literature, we develop numerical and analytical models of the composition profiles, showing very good agreement with experiments. These models suggest that atomically sharp interfaces are attainable for catalyst droplets of small volumes.

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“…The actual sequence of processes which lead to the final nanohole shape and composition are more complicated to predict. The thermodynamic driving force can in first instance be rationalized by the ternary Al-As-Ga system [56]. The initial situation, namely that of a pure Al liquid (the droplet) in contact with an AlGaAs solid (substrate), does not represent equilibrium and will lead to dissolution of the solid.…”

Section: Discussionmentioning

confidence: 99%

Faceting of local droplet-etched nanoholes in AlGaAs

Vonk

Slobodskyy

Keller

et al. 2018

Phys. Rev. Materials

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Nanoholes, drilled in the (001) surface of AlGaAs by local Al droplet etching, are shown to consist of faceted inner walls. The most prominent facets of the inverted pyramidlike nano-sized etch pits are the {111}A and {111}B surfaces, which differ in their atomic surface terminations. In the [110] direction, the {111} facets change to {112} and/or {113}, which are both stepped surfaces with (111)A terraces. Etching-temperaturedependent data indicate that this facet transition seems kinetically hindered up to etch temperatures above 660°C, at which point the walls along [110] have already evolved completely towards {111}B facets. The redeposited ring material outside the nanohole develops facets with indices of (115) and higher, thereby forming relatively flat structures. The facets and their indices are unraveled by a combination of atomic force microscopy, scanning electron microscopy, and x-ray diffraction, which is performed on an ensemble as well as on a single hole using nanodiffraction. These results imply that this nanoconfined etching process can be largely understood in a vapor-liquid-solid scheme, which includes the bulk thermodynamics in the AlGa As system, the surface energies of low index facets, and their etch rates and surface terminations.

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A thermodynamic reassessment of the Al-As-Ga system

Cited by 13 publications

References 22 publications

Ab initio prediction of low-temperature phase diagrams in the Al–Ga–In–As system, MAs–M′As (M, M′ = Al, Ga or In) and AlAs–GaAs–InAs, via the global study of energy landscapes

Ab initio prediction of low-temperature phase diagrams in the Al–Ga–In–As system, MAs–M′As (M, M′ = Al, Ga or In) and AlAs–GaAs–InAs, via the global study of energy landscapes

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory

Faceting of local droplet-etched nanoholes in AlGaAs

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