A thermodynamic theory of filamentary resistive switching
Victor Karpov,
Dipesh Niraula,
Ilya Karpov
et al.
Abstract:We present a phenomenological theory of filamentary resistive random access memory (RRAM) describing the commonly observed features of their current-voltage characteristics. Our approach follows the approach of thermodynamic theory developed earlier for chalcogenide memory and threshold switches and largely independent of their microscopic details. It explains, without adjustable parameters, such features as the domains of filament formation and switching, voltage independent current in SET and current indepen… Show more
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