A Three Demultiplexer C-Band Using Angled Multimode Interference in GaN–SiO2 Slot Waveguide Structures

Abstract

One of the most common techniques for increasing data bitrate using the telecommunication system is to use dense wavelength division multiplexing (DWDM). However, the implementation of DWDM with more channels requires additional waveguide coupler devices and greater energy consumption, which can limit the system performances. To solve these issues, we propose a new approach for designing the demultiplexer using angled multimode interference (AMMI) in gallium nitride (GaN)–silica (SiO2) slot waveguide structures. SiO2 and GaN materials are selected for confining the infrared light inside the GaN areas under the transverse electric (TE) field mode. The results show that, after 3.56 mm light propagation, three infrared wavelengths in the C-band can be demultiplexed using a single AMMI coupler with a power loss of 1.31 to 2.44 dB, large bandwidth of 12 to 13.69 nm, very low power back reflection of 47.64 to 48.76 dB, and crosstalk of −12.67 to −15.62 dB. Thus, the proposed design has the potential for improving performances in the telecommunication system that works with DWDM technology.

Surface Functionalization Utilizing Mesoporous Silica Nanoparticles for Enhanced Evanescent-Field Mid-Infrared Waveguide Gas Sensing

“…However, to our knowledge, LbL assemblies of MSNs for MIR on-chip gas sensing applications have not been explored. This work is also distinct from other WG-based technology used for super resolution imaging, optical filtering and telecommunications [31][32][33]. Thus, this paper illustrates the advantages of using the LbL technique for a specific polymer/nanoparticle submicron coating system composed of branched polyethylenimine/mesoporous silica nanoparticles (BPEI/MSNs).…”

Combining Four Gaussian Lasers Using Silicon Nitride MMI Slot Waveguide Structure

“…In slot waveguide structures, the boundary conditions of the electric field between the low refractive index material (SiO 2 ), and the high refractive index material (Si 3 N 4 ) are the reason for strong light confinement. The amplitude ratio (AR) of the electric field can be calculated in [ 35 ]: where b is the value of the axis at the discontinuity boundary condition, and the different refractive indexes are presented in Figure 1 a. Using Equation (4), the AR is found for the operating wavelength of 1310 nm, and its value is 1.898.…”

Miniaturized Design of a 1 × 2 Plasmonic Demultiplexer Based on Metal–Insulator-Metal Waveguide for Telecommunication Wavelengths

“…Back reflection, particularly the reflection of light into the laser source from the opposite direction, is one of the major issues that might degrade the performance of the transmitter system. The self-imaging trend and the mismatch in the refractive indices of silicon and silica can create reflections in silicon MMI couplers [10].…”