A Three-Dimensional Time-of-Flight CMOS Image Sensor With Pinned-Photodiode Pixel Structure

Kim, Seong‐Jin; Han, Sang-Wook; Kang, Byongmin; Lee, Keechang; Kim, James D. K.; Kim, Chang-Yeong

doi:10.1109/led.2010.2066254

Cited by 37 publications

(27 citation statements)

References 7 publications

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“…As such, the e -/ADC conversion factor or equivalently the full well capacity of the pixel must be known. The result is in line with previously reported values [3,6], to within a constant. The expression can be generalized to:…”

Section: Distance Uncertainty For Time-of-flightsupporting

confidence: 93%

“…Calculations on distance noise from measurement noise has been reported previously for the case of pulsed TOF [3,6] and for phased TOF [6][7][8]. The expressions vary somewhat, but show the same dependencies on pulse duration and signal levels.…”

Section: Introductionmentioning

confidence: 79%

“…The travel time is often calculated by shifting the camera shutter timing such that the camera exposure and the return of the light pulse coincide. The received signal is then obtained through a convolution between the returning laser pulse and the intensifier gate function [3]. The signal reaches a maximum when the two overlap.…”

Section: Distance Uncertainty For Time-of-flightmentioning

confidence: 99%

“…The expressions vary somewhat, but show the same dependencies on pulse duration and signal levels. Comparison against experimental results has been shown for pulsed TOF [3] and for phased TOF [8]. For structured light, some work on noise calculations can be found, e.g [9,10].…”

Section: Introductionmentioning

confidence: 96%

“…From a technical point of view, Structured Light techniques have been pushed forward by rapid development in computer performance for distance calculations [2], development of digital projectors (notably Digital Micromirror Device projectors) and high frame-rate, high resolution digital cameras. Time of Flight techniques have been pushed forward through the increasing availability of pulsed illumination sources (notably LEDs with nanosecond pulse duration) and rapid shutter camera chips [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

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Design tool for TOF and SL based 3D cameras

et al. 2017

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Active illumination 3D imaging systems based on Time-of-flight (TOF) and Structured Light (SL) projection are in rapid development, and are constantly finding new areas of application. In this paper, we present a theoretical design tool that allows prediction of 3D imaging precision. Theoretical expressions are developed for both TOF and SL imaging systems. The expressions contain only physically measurable parameters and no fitting parameters. We perform 3D measurements with both TOF and SL imaging systems, showing excellent agreement between theoretical and measured distance precision. The theoretical framework can be a powerful 3D imaging design tool, as it allows for prediction of 3D measurement precision already in the design phase.

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Section: Distance Uncertainty For Time-of-flightsupporting

confidence: 93%

Section: Introductionmentioning

confidence: 79%

Section: Distance Uncertainty For Time-of-flightmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Design tool for TOF and SL based 3D cameras

et al. 2017

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Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Bartolo-Perez

Qarony

Ghandiparsi

et al. 2021

Advanced Photonics Research

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Silicon photodetectors (PDs) operating at near‐IR wavelengths with high speed and high sensitivity are becoming critical for emerging applications, such as light detection and ranging (LIDAR) systems, quantum communications, and medical imaging. However, such PDs present a bandwidth‐absorption trade‐off at those wavelengths that have limited their implementation. Photon‐trapping (PT) structures address this trade‐off by enhancing the light–matter interactions, but maximizing their performance remains a challenge due to a multitude of factors influencing their design and fabrication. Herein, strategies to improve the PT effect while enhancing the speed of operation are investigated. By optimizing the design of PT structures and experimentally integrating them in high‐speed PDs, a simultaneous broadband absorption efficiency enhancement up to 1000% and a capacitance reduction of more than 50% are achieved. Empirical equations correlate the quantum efficiency of PDs with the physical properties of the PT structures, material characteristics, and limitations of the fabrication technologies. The results that are obtained open routes toward designing cost‐effective complementary metal–oxide‐semiconductor (CMOS)‐integrated receivers.

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Halide Perovskite Photodiode Integrated CMOS Imager

Song,

Kang,

Elkhouly

et al. 2024

ACS Nano

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Thin film photodiodes (TFPD) can supplement complementary metal-oxide-semiconductor (CMOS) image sensor vision by their exotic optoelectronic properties assisted by their monolithic processability. Halide perovskites are known to show outstanding optoelectronic properties, such as large absorption coefficient, long carrier diffusion lengths, and high carrier mobility, leading to high external quantum efficiency (EQE) and fast charge transport in photodiodes (PDs), especially compared with other thin-film photodiode candidates. In this paper, high-resolution two-dimensional (2D) and three-dimensional (3D) imaging capabilities are demonstrated using perovskite photodetection material with a silicon (Si) read-out integrated circuit (ROIC). The integration of this perovskite photodiode (PePD) on the Si ROIC provides fine resolution for 2D imaging. The fast carrier transport properties of the PePD enable depth sensing of objects using the same sensor. 3D imaging is demonstrated using the proposed top-electrode controlled indirect time-of-flight (iToF) operation supported by the fast PD switching through the top common electrode of the TFPD image sensor pixel. It is expected that the PePDs on Si ROIC could mark a significant milestone for the TFPD imaging platform with their outstanding optoelectronic performance in combination with the CMOS image sensor technology, not only for conventional 2D imaging but also by enabling extensions toward 3D sensing, promising applications in automotive, augmented reality (AR), and virtual reality (VR).

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A Three-Dimensional Time-of-Flight CMOS Image Sensor With Pinned-Photodiode Pixel Structure

Cited by 37 publications

References 7 publications

Design tool for TOF and SL based 3D cameras

Design tool for TOF and SL based 3D cameras

Maximizing Absorption in Photon‐Trapping Ultrafast Silicon Photodetectors

Halide Perovskite Photodiode Integrated CMOS Imager

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