A Three-Stage 18.5–24-GHz GaN-on-SiC 4 W 40% Efficient MMIC PA

Duffy, Maxwell R.; Lasser, Gregor; Nevett, Guillermo; Roberg, Michael; Popović, Zoya

doi:10.1109/jssc.2019.2924087

Cited by 43 publications

(23 citation statements)

References 15 publications

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“…1(a). A detailed discussion of the design and static characterization of the amplifier can be found in [24]. It is determined that SM of the last two stages is a good compromise between efficiency improvement and gain linearity.…”

Section: K-band Amplifier and Discrete Supply Modulator Mmicsmentioning

confidence: 99%

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

Duffy

Lasser²,

Popović³

2020

Int. J. Microw. Wireless Technol.

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Abstract This paper presents a high-efficiency linear GaN K-band transmitter for broadband high peak-average power ratio (PAPR) signals. A GaN MMIC 18.5–24 GHz three-stage power amplifier with over 4 W peak output power, 20 dB saturated gain, and 40% peak PAE is supply-modulated with a four-level discrete dynamic supply GaN MMIC. For 100 MHz signals with ${\rm PAPR}\gt 10\, {\rm dB}$ , we demonstrate an average efficiency improvement from 14 to 20% with a simultaneous linearity improvement in noise power ratio (NPR) from 23 to 26 dB through a shaping function focused on gain linearization. For 250 MHz signal bandwidth, there is no observed degradation in NPR and the efficiency is improved by 5 percentage points. For discrete supply modulation, the switching transients between levels are experimentally investigated for wideband signals.

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Section: K-band Amplifier and Discrete Supply Modulator Mmicsmentioning

confidence: 99%

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

Duffy

Lasser²,

Popović³

2020

Int. J. Microw. Wireless Technol.

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“…The MMIC process enables compact circuit design with high power density and reasonable efficiency 10‐12 . The active devices can be adjusted for purpose, as observed in MMIC Doherty PA designs and multistage PA designs 13,14 . Moreover, in the designs involving harmonic manipulation, it is normally fulfilled with additional harmonic termination transmission lines 15,16 .…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12] The active devices can be adjusted for purpose, as observed in MMIC Doherty PA designs and multistage PA designs. 13,14 Moreover, in the designs involving harmonic manipulation, it is normally fulfilled with additional harmonic termination transmission lines. 15,16 While the commonly used strategies for PCB is no longer effective for MMIC, we need to explore the lumped element based design approach outside the discrete circuits.…”

Section: Introductionmentioning

confidence: 99%

LC resonant circuits based matching networks for continuous mode MMIC power amplifiers

Zhu

2020

Micro & Optical Tech Letters

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This article presents a practical design methodology to construct output matching networks for broadband continuous mode monolithic microwave integrated circuit (MMIC) power amplifiers (PAs). Unlike conventional harmonic manipulation approaches, combinations of parallel and series LC resonant circuits are utilized to build the matching networks as it can generate frequencydependent components and locate the varying impedance of continuous mode. With a proper design, the impedance variation in frequency domain can be mapped to the frequency response of the matching network at the fundamental frequency and the second harmonic simultaneously. Matching network design procedures are demonstrated and results show that the frequency response of the network has very good approximation with the desired continuous mode conditions. A prototype PA is implemented on 0.25-μm gallium nitride (GaN) MMIC process, and tested with both continuous-wave and modulated signals. Measurement results show 50.82% maximum drain efficiency and 8.5 dB gain can be achieved across the operation bandwidth of 5.4 to 6.4 GHz.

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“…Moreover, their long lifetime and ease of maintenance make the design of high‐power amplifiers using single GaN‐HEMT bare‐dies possible and hence make them the right candidate for space applications 1‐4 . Since then, numerous SSPA designs based on GaN HEMTs are reported from lower frequency bands, 5‐13 to X ‐ and Ku ‐bands, 14‐16 and even upper bands 17 …”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] Since then, numerous SSPA designs based on GaN HEMTs are reported from lower frequency bands, [5][6][7][8][9][10][11][12][13] to X-and Ku-bands, [14][15][16] and even upper bands. 17 Different technologies, such as monolithic microwave integrated circuits (MMICs), and hybrid integration techniques based on bare-dies have been used for the realization of high-frequency SSPAs. [18][19][20][21][22][23] In research activities at high-frequency bands, MMIC power amplifiers with reasonable size and up to 25 W of power level were realized.…”

Section: Introductionmentioning

confidence: 99%

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

Ahmadi

Moazzen

Baee

et al. 2020

Int J RF Microw Comput Aided Eng

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In this paper, the design, fabrication, and measurement results of a two‐stage X‐band highly efficient 50 W power amplifier are presented. In the design approach, two 0.25 μm bare‐die GaN on SiC transistors, where one of them has the largest gate periphery on the market, are chosen. A considerably high saturated power gain of more than 20 dB and better than 40% power‐added efficiency (PAE) are achieved over the 10.9 to 11.1 GHz bandwidth. Modulated measurements demonstrate an average output power of 40 W with good linearity specifications. Thermal assessment from measurement results ensures transistors' durability.

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A Three-Stage 18.5–24-GHz GaN-on-SiC 4 W 40% Efficient MMIC PA

Cited by 43 publications

References 15 publications

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

Distortion mitigation for 100 and 250 MHz discrete supply modulation of a three-stage K-band MMIC PA

LC resonant circuits based matching networks for continuous mode MMIC power amplifiers

A high‐efficiency 50 W X‐band GaN power amplifier in hybrid MIC technology

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