A time-over-threshold machine: the readout integrated circuit for the BABAR Silicon Vertex Tracker

Kipnis, I.; Collins, T.; DeWitt, J.; Dow, S.; Frey, A.; Grillo, A. A.; Johnson, R. P.; Kroeger, W.; Leona, A.; Luo, Linqing; Mandelli, E.; Manfredi, P. F.; Melani, Maurizio; Momayezi, M.; Morsani, F.; Nyman, M.; Pedrali-Noy, M.; Poplevin, P.; Spencer, E.; Re, V.; Roe, N. A.

doi:10.1109/23.603658

Cited by 124 publications

(35 citation statements)

References 6 publications

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“…The time spent over threshold by the amplifier output is in general proportional to the magnitude of the input signal. Therefore, by measuring the duration of the comparator response, one can extract the information about the input charge [67][68][69][70] …”

Section: Panda Strip Asicmentioning

confidence: 99%

A time-based front-end ASIC for the silicon micro strip sensors of the P̄ANDA Micro Vertex Detector

et al. 2016

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Das PANDA-Experiment ist eines der Hauptexperimente an der geplanten Beschleunigeranlage FAIR (Facility for Antiproton and Ion Research), welche in Darmstadt errichtet wird. Mit dem Experiment soll die Erforschung der starken Wechselwirkung der Hadronenphysik mittels Antiproton-Proton Vernichtungsreaktionen ermöglicht werden. Der Antiprotonenstrahl mit Impulsen zwischen 1.5 GeV/c to 15 GeV/c erlaubt das Studium eines breiten Physikprogramms, inklusive Untersuchung von Hyperon, Open-Charm und exotischen hadronischen Kanälen.Der Mikrovertex-Detektor (MVD) ist die dem Interaktionspunkt am näch-sten gelegene Detektoreinheit des Experimentes. Er basiert auf Siliziumsensoren in Pixel und Streifengeometrien, die die Erkennung und Vermessung von primären und sekundären Spurvertizes ermöglichen.Diese Arbeit beschreibt die grundlegenden Eigenschaften des PANDA Strip ASIC (PASTA), eines vollumfänglich für die Auslese der doppelseitigen PANDA-Streifensensoren entwickelten Chips. Die Architektur von PASTA wurde, im Sinne der Anforderungen an das Experiment, speziell für hohe Zeitauflösung und Ladungsmessung durch einen Zeit-Digitalen Ansatz entwickelt. Ein Zeit-Digitalwandler (TDC), ausgelegt auf eine Zeitbinbreite von 50 ps, erfasst den Time-over-Threshold (ToT) des Sensorsignals nach Verstärkung durch einen dediziert für die Anwendung entwickelten FrontEnd-Verstärker. Insbesondere ist in der Arbeit die theoretische Vorarbeit und das Design des Chips dokumentiert, welche zu der finalen Implementierung führten sowie das Verhalten der Front-End-Stufe, welche mit professionellen Simulationstools charakterisiert wurde. vii JUSTUS

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Section: Panda Strip Asicmentioning

confidence: 99%

A time-based front-end ASIC for the silicon micro strip sensors of the P̄ANDA Micro Vertex Detector

et al. 2016

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“…O VER the past decade, the technological advancement known as device scaling has enabled the use of CMOS processes in the fabrication of mixed signal circuits for radiation detectors with remarkably good performances [1], [2]. Several aspects contributed to the diffusion of CMOS technology in this field.…”

Section: Introductionmentioning

confidence: 99%

Design Optimization of Charge Preamplifiers With CMOS Processes in the 100 nm Gate Length Regime

Ratti

Manghisoni

et al. 2009

IEEE Trans. Nucl. Sci.

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Low noise design of charge sensitive amplifiers in deep submicron CMOS technologies is discussed based on the experimental characterization of transistors belonging to a 130 nm and a 90 nm minimum channel length processes. After briefly examining the main preamplifier noise sources, residing in the input element, achievable resolution limits in charge measuring systems employing such technologies are discussed under different detector capacitance, processing time and power dissipation constraints. The equivalent noise charge (ENC) model adopted in this work takes into account the behavior of series 1/f noise as a function of the overdrive voltage in PMOS devices. Moreover, noise in the gate current, whose effects could be neglected in past CMOS technologies featuring larger gate oxide thickness, is shown to play a role in the optimization process, significantly affecting the preamplifier performance at long shaping times. The extent of this contribution, besides depending on the drain current in the input device, is also determined by its drain voltage, which therefore may become a critical parameter in the design of low noise analog blocks.Index Terms-Charge preamplifier, flicker noise, gate current, low noise design, shot noise, thermal noise.

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“…Time-over-threshold (ToT) [1][2][3] is a pulse processing method in which an input pulse signal is compared with a preset threshold level in order to convert an input charge into a digital pulse with a corresponding time width. As it can be implemented without an independent analog-to-digital converter, The ToT method has advantages over conventional pulse height systems in terms of circuit integration and power consumption.…”

Section: Introductionmentioning

confidence: 99%

The dynamic time-over-threshold method for multi-channel APD based gamma-ray detectors

Orita

Shimazoe

Takahashi

2015

Nuclear Instruments and Methods in Physics Research Section A:

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A time-over-threshold machine: the readout integrated circuit for the BABAR Silicon Vertex Tracker

Cited by 124 publications

References 6 publications

A time-based front-end ASIC for the silicon micro strip sensors of the P̄ANDA Micro Vertex Detector

A time-based front-end ASIC for the silicon micro strip sensors of the P̄ANDA Micro Vertex Detector

Design Optimization of Charge Preamplifiers With CMOS Processes in the 100 nm Gate Length Regime

The dynamic time-over-threshold method for multi-channel APD based gamma-ray detectors

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