1990
DOI: 10.1016/0038-1101(90)90025-a
|View full text |Cite
|
Sign up to set email alerts
|

A titanium dioxide-based MOS hydrogen sensor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
15
0

Year Published

1994
1994
2021
2021

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 17 publications
(15 citation statements)
references
References 21 publications
0
15
0
Order By: Relevance
“…The maximum sensitivity was found $88% at lower frequency (25 kHz) at 4000 ppm H 2 . However, gridded Pt/SiO 2 /Si MOS structure shows better sensitivity to H 2 as reported, [12][13][14] while keeping the SiO 2 film thickness same. The high sensitivity of gridded Pt/SiO 2 /Si MOS structure to H 2 is attributed to the side diffusion of H 2 molecules, increase in surface area of Pt film due to large porosity found in the film, high polarizability of SiO 2 , spill-over mechanism, and increase in fixed surface state density with H 2 concentration.…”
Section: Discussionmentioning
confidence: 76%
See 4 more Smart Citations
“…The maximum sensitivity was found $88% at lower frequency (25 kHz) at 4000 ppm H 2 . However, gridded Pt/SiO 2 /Si MOS structure shows better sensitivity to H 2 as reported, [12][13][14] while keeping the SiO 2 film thickness same. The high sensitivity of gridded Pt/SiO 2 /Si MOS structure to H 2 is attributed to the side diffusion of H 2 molecules, increase in surface area of Pt film due to large porosity found in the film, high polarizability of SiO 2 , spill-over mechanism, and increase in fixed surface state density with H 2 concentration.…”
Section: Discussionmentioning
confidence: 76%
“…During this process, some carriers may get trapped inside SiO 2 resulting in an increase in fixed surface state density. 12 The increase fixed surface state density effects the depletion layer, upon exposure to H 2 , appears to be responsible for a better H 2 response of the device based on SiO 2 . 12 Therefore, the change in fixed surface state density is attributed to high diffusibility and high polarizability of H 2 in SiO 2.…”
Section: Resultsmentioning
confidence: 97%
See 3 more Smart Citations