A tunneling field-effect transistor using side metal gate/high-k material for low power application

Kim, Hyun Woo; Lee, Jung Han; Kim, Wandong; Sun, Min-Chul; Kim, Jang Hyun; Kım, Garam; Kim, Kyung Wan; Kim, Hyungjin; Seo, Joo Yun; Park, Byung‐Gook

doi:10.1109/isdrs.2011.6135286

Cited by 6 publications

(6 citation statements)

References 3 publications

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“…Therefore, the structure is considered as two-dimensional (2D) case. The 2D calculations agree well with full three-dimensional (3D) calculations and also the experimental results [11, 21–25]. The 2D FDTD simulation requires less computer resources than a 3D simulation.…”

Section: Validation Of the Analytic Formulasupporting

confidence: 76%

Theoretical study of liquid crystal dielectric-loaded plasmonic waveguide

Armand

Ardakani

2015

Int. J. Microw. Wireless Technol.

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A fully two-dimensional theoretical study of the electromagnetic wave propagation through Metal–Liquid Crystal–Metal (M–LC–M) waveguide structure is presented. Dispersion relations corresponding to both symmetric and antisymmetric-coupled surface plasmons polaritons modes in M–LC–M structure are derived and numerically solved. The effects of LC tilt angles on the effective refractive index and propagation length are proposed. The analytical method is in good agreement with those obtained from finite-difference time-domain simulation. The obtained analytic formula can be used as an efficient element in designing tunable ultrahigh nanoscale integrated plasmonic devices.

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Section: Validation Of the Analytic Formulasupporting

confidence: 76%

Theoretical study of liquid crystal dielectric-loaded plasmonic waveguide

Armand

Ardakani

2015

Int. J. Microw. Wireless Technol.

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“…In terms of performance competency, it has outperformed conventional silicon MOSFET, SOI MOSFET, and other devices 15,16 . However, because of its distinct tunneling transport, it has significant drawbacks, most notably low ON‐current and ambipolar behavior 14,17,18 . The current properties of TFET are distinctive and can be unpredictable 19 .…”

Section: Introductionmentioning

confidence: 99%

“…15,16 However, because of its distinct tunneling transport, it has significant drawbacks, most notably low ON-current and ambipolar behavior. 14,17,18 The current properties of TFET are distinctive and can be unpredictable. 19 The proposed work demonstrates how a simple 2D structure can achieve similar performance enhancements without tampering with the conventional electron transport technique.…”

Section: Introductionmentioning

confidence: 99%

Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency, low power applications

Yadav

Negi

2022

Int J Numerical Modelling

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In this work, vertically trenched double gate architecture has been investigated, in which the gates are implemented inside vertical oxide trenches. Besides, a silicon‐germanium channel dual‐gate MOSFET with unconventional L‐shaped drain architecture is proposed to improve device performance further. We have shown that the proposed device is the first‐of‐its‐kind device architecture that controls short channel effects and markedly improves transistor performance. Here, The Atlas 2D device simulator has been used to analyze the performance of the devices. At nanoscaled device dimensions, the proposed L‐shaped DG MOS device demonstrated superior ON current characteristics, higher values of transconductance, larger unity gain cut off frequencies, greater Ion to Ioff ratios, higher gain, lower parasitic capacitance, greater transconductance to drain conductance ratio, suppressed drain induced barrier lowering (DIBL), and lower subthreshold swing (S.S.), in comparison to the recently presented Double Gate MOS with unconventional side drain architecture. All these intriguing features demonstrated by the proposed transistor structure make it a potential candidate for low‐power, high‐frequency applications.

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“…Previous simulation results showed this band profile modulation (BPM) effect can lead to an abrupt switching behavior and an improved Ion current of TFETs [12]. Based on this design principle, some novel devices were also proposed [13], [14].Another key point in TFET research is the physical-based analytical modeling. The analytical model not only boosts the computation efficiency but also provides the understanding of the TFET behavior.…”

mentioning

confidence: 99%

mentioning

confidence: 99%

Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

Cui

Liang

Wang

et al. 2012

2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO)

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In this paper, we present an analytical model of silicon-based hetero-material-gate (HMG) tunnel field effect transistor (TFET)_ This model includes the calculation of electric potential, electric field and band-to-band tunneling rate.Electrical characteristics of the HMG TFET can be accurately described by this model. The electrical behavior of the HMG TFET obtained by the analytical model is compared with the numerical simulation results, and shows excellent agreement. It is demonstrated that the HMG TFET has superior electrical performance than single-materia I-gate TFET. I. I NTRODUCTION Recently, tunnel field effect transistor (TFET) has attracted lots of attention for the ultra-low power application [1]- [3]. Theoretical and experimental results showed that TFET devices can provide a subthreshold swing (SS) lower than 60mV/dec at room temperature [4]-[8], and they can achieve a higher ratio between on-and off-state currents compared to MOSFET devices. However, the trade-off between SS and the on-state current (Ion) becomes an obstacle for the development of TFET devices [9]. To improve the Ion current and reduce the average SS simultaneously, a new structure named hetero-material-gate (HMG) TFET was proposed [10], [11]. This device has two materials in the gate with different workfunctions. Due to the special gate structure, the energy band profile of the HMG TFET is modulated, and a local minimum in conduction band is formed. Previous simulation results showed this band profile modulation (BPM) effect can lead to an abrupt switching behavior and an improved Ion current of TFETs [12]. Based on this design principle, some novel devices were also proposed [13], [14].Another key point in TFET research is the physical-based analytical modeling. The analytical model not only boosts the computation efficiency but also provides the understanding of the TFET behavior. In previous literature, some one dimensional (lD) analytical calculations have been reported [15]-[18]. However, duo to the natural behavior of the Manuscript ).quantum tunneling, the 2D model is needed to describe the characteristics of the TFETs. A few 2D analytical modeling results have been developed, such as double-gate structures [19] and single-gate silicon on insulator (SOl) TFETs [20]. In this paper, an analytical model of the HMG TFET is developed, considering the electric field and energy band profile. The accuracy of the model is verified by comparing the model results with the 2D numerical simulation results. The electrical performance of the HMG TFET is examined by the analytical model and numerical simulation in detail. II. A NALYTICAL M ODEL D ESCRIPTION

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A tunneling field-effect transistor using side metal gate/high-k material for low power application

Cited by 6 publications

References 3 publications

Theoretical study of liquid crystal dielectric-loaded plasmonic waveguide

Theoretical study of liquid crystal dielectric-loaded plasmonic waveguide

Novel L‐shaped drain dual‐gateSiGe MOSFETforhigh‐frequency, low power applications

Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

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