A tunneling field-effect transistor with 25 nm metallurgical channel length

Abstract

A tunneling field-effect transistor with an ultrashort channel-length of 25 nm has been experimentally realized using InAs/AlSb heterostructures. The conduction between the source and the drain is through a sequential process, including tunneling and drift-diffusion mechanisms. According to its operating principle, the transistor is inherently free of the conventional short-channel effects. The results demonstrate a new scheme of building nanometer-scale transistors.

Bifunctional Polymer-Metal Nanocomposite Ion Exchange Materials

“…Is due to all of these new properties that, indeed, research centred on nanoscopic materials have a large field of application which extends from the semiconductor industry, where the ability to produce nanometer-scale features leads to faster and less expensive transistors [6], to biotechnology, where luminescent nanoparticles are extremely interesting as bioprobes. [14] Some other particular examples are catalyst for fuel cells [15] or electrocatalysts used in sensing devices with enhanced properties.…”

“…In fact, although Nanoscience and Nanotechnology are quite recent disciplines, there have already been a high number of publications that discuss these topics. [1][2][3][4][5][6][7][8][9][10][11] What is more, there are quite new high impact peer-reviewed journals especially devoted to these research fields and there is also a particular subject category "Nanoscience & Nanotechnology" in the Journal Citation Reports from Thomson Reuters.…”