1987
DOI: 10.1016/0368-2048(87)80069-5
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A tunnelling model for activated adsorption at metal surfaces

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Cited by 29 publications
(11 citation statements)
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“…At an energy of 0.1 eV below the threshold energy ͑1.15 eV͒, the reaction probability has already a value below 10 −5 . This result is in sharp contrast to the results of previous model calculations of the dissociation probability for N 2 on various metal surfaces, [66][67][68][69][70][71][72] where significant reaction probabilities ͑Ϸ10 −5 ͒ have been found for more than 0.3 eV below the barrier energy. Note that N͑E͒ is an upper bound to the initial state-selected reaction probabilities since it is the sum of all reaction probabilities.…”
Section: Resultscontrasting
confidence: 99%
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“…At an energy of 0.1 eV below the threshold energy ͑1.15 eV͒, the reaction probability has already a value below 10 −5 . This result is in sharp contrast to the results of previous model calculations of the dissociation probability for N 2 on various metal surfaces, [66][67][68][69][70][71][72] where significant reaction probabilities ͑Ϸ10 −5 ͒ have been found for more than 0.3 eV below the barrier energy. Note that N͑E͒ is an upper bound to the initial state-selected reaction probabilities since it is the sum of all reaction probabilities.…”
Section: Resultscontrasting
confidence: 99%
“…[66][67][68][69][70][71][72] These calculations show a significant tunneling effect on the reaction probability. As discussed by Haase et al, 67 the results suggest that at room temperature the reaction is completely dominated by a tunneling mechanism, 67 which is quite surprising for a heavy-atom system.…”
Section: Introductionmentioning
confidence: 68%
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“…The positions of the surface atoms were frozen, in order to reduce the computational effort. The strong tunneling effect found in previous model calculations [6][7][8][9][10][11] is not found. In contrast, the tunneling effect was very small above room temperature.…”
contrasting
confidence: 61%