A Tutorial on Double Pulse Test of Silicon and Silicon Carbide MOSFETs

Abstract

In the power electronics and machine drives area, recent advancements in power electronics devices are paving a more sustainable future. The importance of improved power devices is beneficial within the growing industry, for example, Electric Vehicles. New power devices are continuously researched to combat drawbacks like loss and switching time. The electrical engineering curriculum should be supported by market-oriented knowledge and industry skills based on the market leaders' vision and recruiting plans. Our ultimate objective is to modify the power electronics modules' curriculum and reskill our graduates to satisfy the industry's needs. This paper introduces one of the topics in power electronics which was identified as an industry requirement: the Double Pulse Test (DPT), to be highlighted in future curriculums. This test will be used as a comparison tool for two power electronic devices: Silicon MOSFET (Si-MOSFET) and Silicon Carbide MOSFET (SiC-MOSFET).

Review on Power Electronics Curriculums in Academia and Framework Development

“…One of the identified gaps in the PEMD industry is the use of outdated or inappropriate teaching materials at universities that enable the industry to obtain skilled and talented graduates [4]. For example, nowadays, wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) have more attention due to their superior performance in automotive and industrial applications compared to Silicon switches [5]- [8]. However, academic curriculums are still behind to make the new graduates aware.…”