“…Several analytical models have been proposed, among his known model have found the model of Larson [10], the model of Curtice and Curtice-Ettenburg model [11], [12], the disadvantage of these models 1272 is that they cannot simulate the dependence of the parameter Vt on VDS and VGS, so they are not suitable for short-channel devices [12], [13], one of the problems of the Tajima et al [14] is that it does not take into account the simulation of Gm and Gd, for the simulation of MESFET-DC characteristics, Rodriguez introduced an expression based on an expansion of the Curtice model depending on the parameter Vt on the IDS expression [13], the adjustment of the precision of the Curtice model at the level of the linear and saturation regions is improved by the Chalmers model [15], let's look at the Dobes model [16] that we notice for n=2, we return to the Rodriguez model [17], the Materka-Kacprzak model [18] Seemed to be a bit more precise in the linear and saturation regions, but its accuracy degrades significantly when the device size is reduced [19], the Memon model simulates the characteristics of a MESFET-GaAs having a finite density of states at the Schottky barrier [20], by modifying the Ahmed model [17]. It has been shown that the Memon model can simulate the characteristics of the device [20], we therefore propose another new model which takes into account the interface states at the level of the Schottky barrier, which takes into account the simplicity of determining the different characteristics of the MESFET-GaAs device, such as the output transconductance, the output conductance of the MESFET device.…”