A two-dimensional analytical model for the gate–source and gate–drain capacitances of ion-implanted short-channel GaAs metal-semiconductor-field effect transistor under dark and illuminated conditions

Abstract

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Comparative analysis of microwave low‐noise amplifiers under laser illumination

“…The basic material characteristics are rewarding for low‐noise, high‐speed applications, whereas the energy gap features makes high optical responsivity levels achievable. Thus, optical control of the microwave signals processed by GaAs‐based circuits has shown to be an appealing feature that can be effectively exploited in advanced telecommunication applications, in high‐data‐rate computing systems, and in controlling the switching dynamics of power semiconductor devices to reduce stress mechanisms and electromagnetic emission . So far, the attention of the research community has been mainly focused on the investigation of the impact of the light exposure on the isolated device performance , whereas this article treats in detail the analysis of the circuit response under optical illumination.…”

Analytical modelling of the current ( I )–voltage ( V ) characteristics of sub‐micron gate‐length ion‐implanted GaAs MESFETs under dark and illuminated conditions

“…a c = 1.7857142, b c = 0.6460835 and c c = 0.28 p √ [28,29]. The total channel-doping concentration, say N D (y), in the active channel region under illuminated condition is given by [16,28]…”

“…where N d (y) represents the doping profile defined by (1), R is the surface recombination rate, α is the absorption coefficient of GaAs material, τ n and τ p are the lifetime of electrons and holes, respectively, and G(y) is the photogeneration rate given by [28,35] G(y) = F 0 a exp(−ay)…”

“…where q is the electronic charge, Z is the device width, v n (E) is the drift velocity of electron, N D (y) is the net-doping concentration defined in (3) and h(x) in the depletion region height under the gate given as [28] (see (10)) ε s is the permittivity of the GaAs semiconductor. D, D 1 and D 2 are…”

“…where V sat is the minimum drain-source voltage required for the onset of velocity saturation [28,38], v s is the saturation velocity, (v s = 2.3 × 10 5 m/s) [39], μ 0 is the low-field carrier mobility (μ 0 = 2800 cm 2 /V × s) [40] and V th is the short-channel threshold voltage of GaAs OPFETs [41]. It is important to mention here that for the drain-source voltage greater than V sat , the depletion region at drain end of the gate extends laterally into the channel thus reducing the effective channel length (as shown in Fig.…”