A two-qubit gate between phosphorus donor electrons in silicon

He, Yu; Gorman, Samuel K.; Keith, D. A.; Kranz, Ludwik; Keizer, J. G.; Simmons, M. Y.

doi:10.1038/s41586-019-1381-2

Cited by 324 publications

(311 citation statements)

References 33 publications

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“…We note in passing that the one-qubit operation times can be 10 ns or shorter [44,45] and our gate times are comparable. As mentioned, recently a two-qubit gate with operation time of less than a nanosecond was experimentally achieved in the context of electron spin qubits in atoms [31]. Our proposal predicts comparable results for superconducting circuits, though for a direct three-qubit gate working in a limited part of the qubit subspace.…”

Section: Discussionsupporting

confidence: 63%

Native three-body interaction in superconducting circuits

Pedersen

Christensen²,

Zinner

2019

Phys. Rev. Research

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We show how a superconducting circuit consisting of three identical, non-linear oscillators in series considered in terms of its electrical modes can implement a strong, native three-body interaction among qubits. Because of strong interactions, part of the qubit-subspace is coupled to higher levels. The remaining qubit states can be used to implement a restricted Fredkin gate, which in turn implements a CNOT-gate or a spin transistor. Including non-symmetric contributions from couplings to ground and external control we alter the circuit slightly to compensate, and find average fidelities for our implementation of the above gates above 99.5% with operation times on the order of a nanosecond. Additionally we show how to analytically include all orders of the cosine contributions from Josephson junctions to the Hamiltonian of a superconducting circuit.

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Section: Discussionsupporting

confidence: 63%

Native three-body interaction in superconducting circuits

Pedersen

Christensen²,

Zinner

2019

Phys. Rev. Research

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“…Silicon‐based qubit technologies appear to be an obvious choice and various groups have pursued this option using the spin states associated with single dopant atoms [ 6,14–16 ] or electrostatically gated quantum dots [ 3,17,18 ] as qubits in Si. The key challenges in these strategies are the atomically precise dopant placement, [ 19 ] access and control of single dopant states, [ 20 ] and the negligible spin–orbit interaction in Si perhaps makes it less efficient for electrical access and control.…”

Section: Introductionmentioning

confidence: 99%

Toward Valley‐Coupled Spin Qubits

et al. 2020

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The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin‐based qubits in solid‐state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid‐state spin qubits as residual spins from substrate, dielectric, electrodes, or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley‐coupled spins in monolayer transition metal dichalcogenides. Such valley‐coupled spins are protected by inversion asymmetry and time reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up‐to‐date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin‐valley qubits.

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“…Therefore, even in STM‐fabricated devices, dynamical control of the exchange interaction is preferentially achieved by detuning the electrochemical potential of the two spins using side gates. [ 21 ]…”

Section: Multiqubit Operationsmentioning

confidence: 99%

Donor Spins in Silicon for Quantum Technologies

et al. 2020

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Dopant atoms are ubiquitous in semiconductor technologies, providing the tailored electronic properties that underpin the modern digital information era. Harnessing the quantum nature of these atomic‐scale objects represents a new and exciting technological revolution. In this article, the use of ion‐implanted donor spins in silicon for quantum technologies is described. It is reviewed how to fabricate and operate single‐atom spin qubits in silicon, obtaining some of the most coherent solid‐state qubits, and pathways to scale up these qubits to build large quantum processors are discussed. Heavier group‐V donors with large nuclear spins display electric quadrupole couplings that enable nuclear electric resonance, quantum chaos, and strain sensing. Donor ensembles can be coupled to microwave cavities to develop hybrid quantum Turing machines. Counted, deterministic implantation of single donors, combined with novel methods for precision placement, will allow the integration of individual donor spins with industry‐standard silicon fabrication processes, making implanted donors a prime physical platform for the second quantum revolution.

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A two-qubit gate between phosphorus donor electrons in silicon

Cited by 324 publications

References 33 publications

Native three-body interaction in superconducting circuits

Native three-body interaction in superconducting circuits

Toward Valley‐Coupled Spin Qubits

Donor Spins in Silicon for Quantum Technologies

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