A-type antiferromagnetic order in semiconducting EuMg2Sb2 single crystals

Growth and characterization of the magnetic topological insulator candidate Mn2Sb2Te5

“…The linear fitting of 1/χ versus T provides the value of θ CW close to −5.84 (θ CW < 0), elucidating FM interactions between the Mn 2+ ions, consistent with the predicted A-type antiferromagnetic (AFM) ordering of Mn 2 Sb 2 Te 5 . Similar ordering is reported by scientist for other materials EuMg 2 Sb 2 [55], EuSn 2 As 2 [56], SmMg 2 Bi 2 [57]. Taking the relationship between curie constant and effective magnetic moment µ eff defined as C = N A µ 2 eff / 3K B which gives µ eff = 2.828√C in unit of Bohr magneton (µ B ).…”

Magnetic properties of the putative higher-order topological insulator EuIn$_2$As$_2$

“…in the region of negligible shortrange interactions, evident from the magnetic susceptibility studies. The obtained values of the parameters are similar to those reported for isostructural Eu-based systems (e.g., for EuMg 2 Sb 2 they are θ D = 415 K, θ E = 111 K, and w = 0.48 [35]).…”

Magnetic field induced ab -plane rotation of the Eu magnetic moments in trigonal EuMg2Bi2 and Pakhira1, Lee2, Ke3 et al. 2022Phys. Rev. BSelf Cite

“…These authors suggested that this T -independent χ ab (T ≤ T N ) behavior might arise from a field-induced helical magnetic structure with a turn angle of ≈ 120 • based on MFT [9], which we now know is not the correct magnetic structure [7]. A similar anomalous behavior of χ ab (H, T ) was recently observed for EuMg 2 Sb 2 crystals [8].…”

“…For these materials, these data show an unexpected positive curvature as shown in Fig. 1 [7,8]. It was suggested that this behavior may be caused by a field-induced reorientation of the magnetic moments in the three trigonal domains dictated by the crystal symmetry rather than by a field-induced change in the magnetic structure [7].…”

“…The band structure of EuMg 2 Sb 2 was also reported. Detailed measurements of the magnetic and thermal properties of EuMg 2 Sb 2 single crystals have also been carried out recently [8]. The ρ(T ) and angleresolved photoemission (ARPES) measurements revealed semiconducting behavior with an energy gap of 370 meV.…”