2004
DOI: 10.1016/j.actamat.2004.02.048
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A unified approach to motion of grain boundaries, relative tangential translation along grain boundaries, and grain rotation

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Cited by 427 publications
(389 citation statements)
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“…Moreover, the coupling shear is able to drastically decrease the minimum value of energy change. The critical shear stress τ c for initiating the dislocation emission process can be reduced significantly due to the existence of coupled shear during the migration process, especially in the case of high-angle boundary; and it is important to note that there is a critical coupling factor β c that corresponds to the minimum τ c , which indicates that the dislocations in NC materials can possibly be maximized by engineering the GB structure to obtain an appropriate value of β [31,33]. The predicted critical shear stress for initiating multiple dislocations that emit from disclinated GBs into grain interiors in multiple slip systems has also been validated by the existing MD simulations for a nanocrystalline Cu sample of 10 nm grain size.…”
Section: Discussionmentioning
confidence: 99%
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“…Moreover, the coupling shear is able to drastically decrease the minimum value of energy change. The critical shear stress τ c for initiating the dislocation emission process can be reduced significantly due to the existence of coupled shear during the migration process, especially in the case of high-angle boundary; and it is important to note that there is a critical coupling factor β c that corresponds to the minimum τ c , which indicates that the dislocations in NC materials can possibly be maximized by engineering the GB structure to obtain an appropriate value of β [31,33]. The predicted critical shear stress for initiating multiple dislocations that emit from disclinated GBs into grain interiors in multiple slip systems has also been validated by the existing MD simulations for a nanocrystalline Cu sample of 10 nm grain size.…”
Section: Discussionmentioning
confidence: 99%
“…This athermal process [20] normally consists of a normal GB migration accompanied by a tangential translation of grains parallel to the GB plane for both low-angle and high-angle boundaries; the process would then produce shear deformation of the lattice traversed by the migrated GB. The translation distance s is related to the normal migration distance m by a coupling factor β ¼ s=m [31]. The value of β is determined by the geometry of the GB concerned [31,32], and the maximum value of β can reach 1 based on experiments [27,33] and MD simulations [25,32] and reach 5 according to theoretical studies [34,35].…”
Section: Introductionmentioning
confidence: 99%
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“…[2,7,14,18,20,21,24,31] Noteworthy, however, is the fact that most published theoretical and experimental papers related to stressinduced grain growth focus on single-phase materials and as a result, material systems containing secondphase particles have been rarely reported. Moreover, although many materials that contain a high level of solute segregation at GBs are selected as model materials for studies of stress-induced grain growth, [5,9,11,32,33] the influence of solute atoms segregated at GBs on stress-induced grain growth has been investigated only in very limited cases.…”
Section: Stress-induced Grain Growth Has Attractedmentioning
confidence: 99%
“…Only recently this phenomenon has started to attract much attention and to be systematically studied either through experiments [8][9][10][11][12][13], or theoretically [14] or by numerical simulations [15][16][17][18][19][20]. We refer here to stress/strain coupled GB migration (limited in fact to shear-coupled migration of tilt boundaries or associated to the tilt component of grain boundaries), not to be mistaken with "strain-induced GB migration", a term used since early recrystallization studies to denote the preferred migration of a GB separating two grains with a very different strain-induced dislocation density [21,22].…”
Section: Introductionmentioning
confidence: 99%