A unified explanation for gate current in n-MOS devices based on hot electrons and the Poole-Frenkel effect

Harrell, William R.; Frey, J.

doi:10.1016/0167-9317(93)90174-4

Cited by 7 publications

(4 citation statements)

References 8 publications

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“…40 nA at a bias voltage of 1.0 V, which is due to conduction through only the Cyt c network array. The I−V curves above 90 K can be described by the Frankel−Poole conduction model, 20 which indicates a hopping conduction mechanism (Supporting Information, Figures SI.6, SI.7, and SI.8).…”

Section: Resultsmentioning

confidence: 99%

Stochastic Resonance in a Molecular Redox Circuit

et al. 2012

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Beyond single molecule electronics, exploration of device architecture is a central issue in molecular-scale electronics. We have demonstrated that the cytochrome c (Cyt c) network array acts as an electronic circuit that consists of a redox element. The current–voltage characteristics of the Cyt c network array reveal nonlinear curves with a threshold voltage (V th) that corresponds well with the Coulomb blockade (CB) model over a wide range of temperature. As an indication of the threshold behavior, a weak periodic input signal is optimized by the presence of a particular level of noise that enhances signal detection. This result indicates that stochastic resonance (SR) emerges in the Cyt c redox network array.

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Section: Resultsmentioning

confidence: 99%

Stochastic Resonance in a Molecular Redox Circuit

et al. 2012

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“…At first glance, the I – V curve with a weak nonlinear property can be seen even at 300 K. All the I – V curves were analyzed by the Frankel–Poole conduction model based on the hopping conduction mechanism. In this conduction model, the I – V relationship can be written as ln true( I V true) ∼ V ( 1 / 2 ) where I and V are the current and bias voltage, respectively . Not only barriers between Mn 12 molecules but also trap levels are involved in the concept of the hopping model, and both the barriers and the trap levels are changed by the externally applied potential V (see the Supporting Information, Figure SI.8).…”

Section: Resultsmentioning

confidence: 99%

Mn₁₂ Molecular Redox Array Exhibiting One-Dimensional Coulomb Blockade Behavior

et al. 2012

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We have found that nonlinear current–voltage characteristics (I–V curves) are observed in the Mn12 {[Mn12O12(O2CC6H5)12(O2CC6H4NH2)4(H2O)4]·2(CH2Cl2)} molecular redox array in the temperature range from 10 to 300 K. Among them, I–V characteristics with threshold voltages (V th) are clearly observed from 10 to 80 K. The I–V curves with V th can be well fitted by applying the one-dimensional (1D) Coulomb blockade (CB) model. The V th value is 280 mV at 10 K and decreases linearly with increasing temperature. These results indicate that each Mn12 acts as a CB element in the 1D array at 80 K or below. Thus, it is suggested that the Mn12 molecular redox system can be described by the CB behavior.

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“…The Poole-Frenkel (PF) effect (1,2), a mechanism of field-enhanced thermal emission of charge carriers from bulk traps, is often used to explain conduction in thin dielectric films and enhanced currents in semiconductor materials and devices. PF emission is often observed in dielectric materials, such as SiO 2 (3,4,5,6) and Si 3 N 4 (7,8). This leakage mechanism has also been observed in high-k dielectrics, such as Ta 2 O 5 and BaSrTiO 3 (9), Al 2 O 3 (10), and rare earth oxides such as Eu 2 O 3 (11) and HfO 2 (12,13).…”

Section: Introductionmentioning

confidence: 93%

“…Thus we can write n PF ≈ N C F n , where N C is the effective density of states. Combining this expression for n PF with equations [7], [6], and [4], and after considerable algebraic manipulation, an expression for the relative electron density in the conduction band, n r = n PF / N C , can be written as:…”

Section: A Pf Model Using Fermi-dirac Statisticsmentioning

confidence: 99%

Implications of Non-Linear Poole-Frenkel Plots on High-k Dielectric Leakage

2006

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The implications of a modern model of the Poole-Frenkel (PF) effect on the characterization of high-k dielectric leakage are investigated. The classical PF model predicts a characteristic graph known as the PF plot which is linear for all fields, and a single linear region on such a plot of measured current is taken as evidence of PF emission. However, the modern model of the PF effect, incorporating the Fermi-Dirac function, is more accurate, and we show that this model predicts non-linear PF plots. The implications for characterizing dielectric leakage with the modern model are discussed. Observation and characterization of a non-linear PF plot of measured leakage current in thin Al2O3 films is presented.

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A unified explanation for gate current in n-MOS devices based on hot electrons and the Poole-Frenkel effect

Cited by 7 publications

References 8 publications

Stochastic Resonance in a Molecular Redox Circuit

Stochastic Resonance in a Molecular Redox Circuit

Mn₁₂ Molecular Redox Array Exhibiting One-Dimensional Coulomb Blockade Behavior

Implications of Non-Linear Poole-Frenkel Plots on High-k Dielectric Leakage

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A unified explanation for gate current in n-MOS devices based on hot electrons and the Poole-Frenkel effect

Cited by 7 publications

References 8 publications

Stochastic Resonance in a Molecular Redox Circuit

Stochastic Resonance in a Molecular Redox Circuit

Mn12 Molecular Redox Array Exhibiting One-Dimensional Coulomb Blockade Behavior

Implications of Non-Linear Poole-Frenkel Plots on High-k Dielectric Leakage

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Product

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Mn₁₂ Molecular Redox Array Exhibiting One-Dimensional Coulomb Blockade Behavior