2023 IEEE International Reliability Physics Symposium (IRPS) 2023
DOI: 10.1109/irps48203.2023.10117832
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A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs

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Cited by 2 publications
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“…Thus, memory non-idealities, including write variation and read-disturb [17] are the large issues in ReRAM CiM [16]. In addition, ReRAM has been suffered from its conductance fluctuation [2][3][4][5][6][7][18][19][20][21][22][23][24][25][26]. The main fluctuation pattern has been considered the random telegraph noise (RTN) conventionally, but there are still other fluctuation patterns are reported [2,[18][19][20][21][22]26].…”
Section: Introductionmentioning
confidence: 99%
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“…Thus, memory non-idealities, including write variation and read-disturb [17] are the large issues in ReRAM CiM [16]. In addition, ReRAM has been suffered from its conductance fluctuation [2][3][4][5][6][7][18][19][20][21][22][23][24][25][26]. The main fluctuation pattern has been considered the random telegraph noise (RTN) conventionally, but there are still other fluctuation patterns are reported [2,[18][19][20][21][22]26].…”
Section: Introductionmentioning
confidence: 99%
“…In addition, ReRAM has been suffered from its conductance fluctuation [2][3][4][5][6][7][18][19][20][21][22][23][24][25][26]. The main fluctuation pattern has been considered the random telegraph noise (RTN) conventionally, but there are still other fluctuation patterns are reported [2,[18][19][20][21][22]26]. G. González-Cordero et al (2021) adopted self-organization map (SOM) to fluctuating signal analysis [26], but it does not work properly on our measured signals.…”
Section: Introductionmentioning
confidence: 99%