A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

Sánchez, F.J. Garcı́a; Ortíz‐Conde, A.; Muci, Juan; Sucre-González, Andrea; Liou, Juin J.

doi:10.1016/j.microrel.2014.11.013

Microelectronics Reliability

2015

DOI: 10.1016/j.microrel.2014.11.013

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A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

F.J. Garcı́a Sánchez

A. Ortíz‐Conde

Juan Muci

et al.

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Cited by 10 publications

References 67 publications

(136 reference statements)

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Organic transistor‐based integrated circuits for future smart life

Xie,

Ding,

Jin

et al. 2024

SmartMat

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With the rapid development of advanced technologies in the Internet of Things era, higher requirements are needed for next‐generation electronic devices. Fortunately, organic thin film transistors (OTFTs) provide an effective solution for electronic skin and flexible wearable devices due to their intrinsic features of mechanical flexibility, lightweight, simple fabrication process, and good biocompatibility. So far considerable efforts have been devoted to this research field. This article reviews recent advances in various promising and state‐of‐the‐art OTFTs as well as related integrated circuits with the main focuses on: (I) material categories of high‐mobility organic semiconductors for both individual transistors and integrated circuits; (II) effective device architectures and processing techniques for large‐area fabrication; (III) important performance metrics of organic integrated circuits and realization of digital and analog devices for future smart life; (IV) applicable analytical models and design flow to accelerate the circuit design. In addition, the emerging challenges of OTFT‐based integrated circuits, such as transistor uniformity and stability are also discussed, and the possible methods to solve these problems at both transistor and circuit levels are summarized.

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Organic transistor‐based integrated circuits for future smart life

Xie,

Ding,

Jin

et al. 2024

SmartMat

View full text Add to dashboard Cite

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A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

Ortíz‐Conde

Sucre-González

Zarate-Rincon

et al. 2017

Microelectronics Reliability

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A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology

Rossi

Pullini

Loi

et al. 2016

Solid-State Electronics

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A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction

Cited by 10 publications

References 67 publications

Organic transistor‐based integrated circuits for future smart life

Organic transistor‐based integrated circuits for future smart life

A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

A 60 GOPS/W, −1.8 V to 0.9 V body bias ULP cluster in 28 nm UTBB FD-SOI technology

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