A Unified Method for Calculating Capacitive and Resistive Coupling Exploiting Geometry Constraints on Lightly and Heavily Doped CMOS Processes

Bontzios, Yiorgos I.; Hatzopoulos, A.A.

doi:10.1109/ted.2010.2050112

Cited by 8 publications

(5 citation statements)

References 11 publications

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“…Hence, the agreement between model and measurements for small d and large L in Fig. 11(a) validates the R T 2-D model (6). On the other hand, for square contacts, Rf T L decreases with W and R T 2-D increases with d making Rf T L ∼ R T 2-D for large W and d. Hence, given the validation of R T 2-D from Fig.…”

Section: Comparison With Measurements and Other Modelssupporting

confidence: 72%

“…Fig. 11 shows that the calculations based on (1), (2), (6), and (14), and the values of ρ, T given in [26] agree with measurements of [26] over a wide range of aspect ratios 1≤ L/W ≤ 20 and 0<d/W ≤ 20. The photograph of the contact array measured in [26] shows L and W to be on the order of the contact dimensions, so we assumed L = 50 μm for rectangular contacts and L = 25 μm for square contacts to minimize the error; the influence of W is not significant (see Table I) and so contacts and L = 25 μm for square contacts to minimize the error; the influence of W is not significant (see Table I) and so we set W at a large value.…”

Section: Comparison With Measurements and Other Modelsmentioning

confidence: 52%

“…This problem is exacerbated with decreasing geometries and supply voltages, and increasing digital content. Coupling effects can be estimated using numerical models [2]- [6]. However, for intuitive design and circuit simulation, a compact model is required.…”

Section: Introductionmentioning

confidence: 99%

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Quasi-Static Compact Model for Coupling Between Aligned Contacts on Finite Substrates With Insulating or Conducting Backplanes

Badami

Karmalkar

2012

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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We derive a closed-form quasi-static model for the coupling impedance between aligned coplanar rectangular contacts on bulk and epitaxial semiconductor substrates by resolving the 3-D field lines into simpler components (vertical, lateral, fringing, 2-D, etc.). Both insulating and conducting (grounded or floating) backplane conditions are considered. Our model reflects all the geometry and process parameters, and its constants are process independent and universal. The model also gives the capacitive coupling via ambient, i.e., via the region outside the substrate, and specifies conditions under which a given thickness or lateral extension of the substrate can be regarded as infinite. Comparisons with technology computer-aided design simulations and measurements validate the model over a wide range of width/length and width/separation ratios of the contacts.

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Section: Comparison With Measurements and Other Modelssupporting

confidence: 72%

Section: Comparison With Measurements and Other Modelsmentioning

confidence: 52%

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Quasi-Static Compact Model for Coupling Between Aligned Contacts on Finite Substrates With Insulating or Conducting Backplanes

Badami

Karmalkar

2012

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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“…The most common coupling occurs via the semiconductor substrate and ambient (e.g. [3], [4]). We discuss a model for this coupling, that holds good under quasi-static conditions, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…[3]- [4]), to estimate coupling, circuit blocks are represented by rectangular contacts (of same size as the circuit block) on the substrate, the coupling between the blocks via substrate by a parallel combination of resistance and a capacitance, and the coupling via ambient by a capacitance (Fig. 1).…”

Section: Introductionmentioning

confidence: 99%

A Quasi-Static Model for the Coupling Impedance between Coplanar Rectangular Contacts on a Bulk Substrate

Anvar

Karmalkar

Gokul

et al. 2016

2016 29th International Conference on VLSI Design and 2016 15th International Conference on Embedded Systems (VLSID)

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We present a compact model for the quasi-static coupling impedance between two coplanar rectangular contacts, which are misaligned and non-identical, on a bulk substrate. The coupling resistance is modeled as weighted arithmetic mean of the resistances of four aligned identical contact geometries for which a model is available in literature. Our model is scalable with contact dimensions and separation and has been validated against TCAD simulations.

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Closed-form expressions for the coupling capacitance of metal fill tiles in VLSI circuits

Tsatsoulis

Bontzios

Dimopoulos

et al. 2013

Microelectronics Journal

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A Unified Method for Calculating Capacitive and Resistive Coupling Exploiting Geometry Constraints on Lightly and Heavily Doped CMOS Processes

Cited by 8 publications

References 11 publications

Quasi-Static Compact Model for Coupling Between Aligned Contacts on Finite Substrates With Insulating or Conducting Backplanes

Quasi-Static Compact Model for Coupling Between Aligned Contacts on Finite Substrates With Insulating or Conducting Backplanes

A Quasi-Static Model for the Coupling Impedance between Coplanar Rectangular Contacts on a Bulk Substrate

Closed-form expressions for the coupling capacitance of metal fill tiles in VLSI circuits

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