A unified silicon/silicon carbide IGBT model

Saadeh, Mahmood; Mantooth, H. Alan; Balda, Juan Carlos; Hudgins, J.L.; Santi, Enrico; Ryu, Sei‐Hyung; Agarwal, Anant

doi:10.1109/apec.2012.6166055

Cited by 16 publications

(9 citation statements)

References 7 publications

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“…where cjo is the zero-bias junction capacitance, and mj is the grading coefficient. agd is the gate-drain overlap area and ads is the body region area, where the sum of these areas is equal to the active area of the device a [1], [8]. This relationship is also indicated in Fig.…”

Section: A Mosfet Componentmentioning

confidence: 76%

“…This model covers the physics for both Si and SiC as well as n-and p-type devices. It builds on the contributions of past work in silicon in [8] and [12], and adds new contributions such as the modeling of SiC IGBT devices that were first reported in [1]. One key utility of the presented model comes from the fact that this model can be fit to any commercially available Si/SiC IGBT device as long as Fig.…”

mentioning

confidence: 98%

“…Power BJTs, another alternative when utilizing high-power electronics, possess superior current density and transfer characteristics and are more suitable for highvoltage applications compared to MOSFETs. However, BJTs are current-controlled devices with more complex base drive requirements, tend to suffer breakdown during switching of inductive loads, and also have much slower switching speeds compared to MOSFETs [1], [2]. Thyristors are good for highpower applications, but suffer from the need to have extremely complex and high-powered gate-current circuits to achieve turn OFF. IGBTs are voltage-controlled devices that possess the simpler gate drive requirements of MOSFETs, but also offer lower on-state voltage drop, higher current density, and wider safe operating area (SOA) as compared to MOSFETs. With high-voltage forward and reverse blocking capabilities, the possibilities for IGBTs become manifold from medium voltage drives and power supplies to high-power ac and PV inverters to grid-connected power supplies.…”

mentioning

confidence: 99%

“…A widely used Si n-channel IGBT compact model was presented in [8] and [12]. The first SiC IGBT compact model was reported by Saadeh et al [1]. An n-channel SiC n-channel IGBT model was published in [9] to include buffer layer/field stop effects.…”

mentioning

confidence: 99%

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A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

Perez

Kotecha

Rashid

et al. 2019

IEEE Trans. Power Electron.

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This paper presents a unified physics-based insulatedgate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n-and p-channel devices. The model can predict the detailed switching waveforms of these technologies based on its charge-based formulation. Further, this compact IGBT model is presented alongside a unique datasheet-driven parameter extraction process. The parameter extraction process enables users to quickly extract model parameters from data typically published without the need of taking physical measurements. The model has been validated with both Si and SiC devices for static and dynamic characteristics. The SiC IGBTs used for validation are a 12.5-kV n-channel device and a 13-kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS Corp. (Milpitas, CA, USA). This is the only IGBT model that predicts the performance of both n-and p-channel, Si and SiC devices, providing more freedom for the development of complex power electronics circuit designs. The convergence of the model has been verified by implementing a complex circuit consisting of both a dc-dc converter and a dc-ac inverter. The results presented here show that the unified model can be used to describe the behavior of a wide range of Si and SiC IGBT circuits. This paper is accompanied by a Verilog-A source code and a power point file demonstrating the model parameter extraction sequence.Index Terms-Compact model, datasheet driven model, device modeling, insulated gate bipolar transistor (IGBT), power switching devices, silicon carbide (SiC).

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Section: A Mosfet Componentmentioning

confidence: 76%

mentioning

confidence: 98%

mentioning

confidence: 99%

mentioning

confidence: 99%

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A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

Perez

Kotecha

Rashid

et al. 2019

IEEE Trans. Power Electron.

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“…This has generally been because these solutions have been based on available tools and limited models which were not developed to take into account the particularities of the Avionic domain (huge and complex systems, multi-domain systems, multiple switching devices, and multiple networks. The other technique commonly used is to develop models for a specific region of operation such as power semiconductor compact models [15][16][17][18], [23].…”

Section: Key Challengesmentioning

confidence: 99%

Advanced avionics applications simulation platform (AAASP) for accurate aircraft systems simulation

Wilson

Storey

2016

2016 IEEE Aerospace Conference

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A persistent problem for Aircraft Manufacturers has been the difficulty in carrying out accurate and robust simulations of the complete aircraft power network, while including numerous models from a variety of individual equipment suppliers. Often the models are of variable or low quality, with ill-defined parameters or behavior, and in many cases of the wrong level of abstraction to be appropriate for large scale network simulations. In addition, individual equipment suppliers often provide poor models for network integration, with a common issue being low robustness of models leading to lack of convergence, excessive simulation times and delays in development due to the need for rework and extensive testing of these models. In order to address this specific issue a complete library of power electronic system models for Aerospace applications has been developed that encompasses the range of functions from elementary components (passives, devices, switches and magnetic components), intermediate building blocks (rectifiers, inverters, motors, protection devices) and finally complete system models (variable frequency starter generators, power converters, battery and storage elements, transformers). These models have been developed in partnership with several key aircraft equipment suppliers and in partnership with Airbus to ensure that the resulting models are complete and robust. Specific equipment models were also developed in this library including permanent magnet generators, synchronous machines, environmental control systems, wing ice protection systems, power electronic modules and advanced power protection systems. The specific models have been validated against reference and measured data to ensure that they are consistent and accurate. This paper will describe the techniques used to achieve more robust models, using model based engineering, the integration of specific equipment models into the complete aircraft network and the validation of the behavior against measured results. The paper will provide the results of a complete aircraft power network highlighting how the individual models are integrated into the overall network model and the inherent robustness ensure effective, accurate and robust simulations.

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Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits

Matsuura

Tanimoto

Saito

et al. 2019

Solid-State Electronics

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A unified silicon/silicon carbide IGBT model

Cited by 16 publications

References 7 publications

A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

Advanced avionics applications simulation platform (AAASP) for accurate aircraft systems simulation

Analysis and compact modeling of temperature-dependent switching in SiC IGBT circuits

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