A universal high-current implanter for surface modification of materials

Nielsen, B.R.; Abrahamsen, P.; Eriksen, S. R.

doi:10.1016/0921-5093(89)90145-7

Cited by 26 publications

(3 citation statements)

References 3 publications

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“…The implanter contains a high current multipole reflex discharge ion source (CHORDIS), 10,11 and produces mass analyzed beam currents (max. 10 mA) of a large number of ion species in the energy range from 20 to 200 keV.…”

Section: Materials and Experimental Techniquesmentioning

confidence: 99%

Amorphization Effects on Pure Titanium Using C⁺, O⁺ and Cr⁺ Ion Implantation

Athanasiou

Lanza

Paracchini

et al. 1998

Int. J. Mod. Phys. B

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In this work, the influence of the amorphization effect of C + , 0 + and Cr + implantation on the friction and wettability properties of pure titanium (grade 2) has been studied. Doses from 1 x 10 17 to 5 x 10 17 ions cm -2 at multiple energies of 50 to 190 keV have been used. Additionally, pin-on-disk tribological tests using Ultra-High-MolecularWeight-Polyethylene (UHMWPE) pins under lubricated conditions and wettability measurements of implanted and unimplanted titanium samples were carried out. We found, that the more suitable material for the wettability and hence wear resistance is C + implanted titanium, because of its higher surface energy than the unimplanted titanium corresponding energy. Friction tests on monoenergetic 180 keV C + and 0 + modified titanium with 1 x 10 17 ions cm -2 have showed an essentially reduced friction compared to samples implanted with the same dose but at multiple energies. A reduction of the wettability by about 7% and the friction coefficient by about 18% was observed for carbon implanted titanium with a dose of 1 x 10 17 C + cm -2 ; this effect corresponds to a good correlation between wettability and friction coefficient after C + implantation in titanium. It was concluded that the reduction of the friction coefficient with monoenergetic C + implanted titanium is 3.7 times lower compared with those of pure titanium. This important result could extend the average lifetime of orthopaedic components of approximately 2 orders of magnitude.

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Section: Materials and Experimental Techniquesmentioning

confidence: 99%

Amorphization Effects on Pure Titanium Using C⁺, O⁺ and Cr⁺ Ion Implantation

Athanasiou

Lanza

Paracchini

et al. 1998

Int. J. Mod. Phys. B

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“…The high current ion implanter installed at ITN, Sacavém, Portugal, represented in Figure 1, is the model 1090 of Danfysik [5][6]. The operating flexibility of the ion source (gas and sputter version), makes possible the production of ion beams from nearly all elements of the periodic table [7].…”

Section: System Descriptionmentioning

confidence: 99%

Optimization Of A Mass Spectrometry Process

Lopes¹,

Alegria²,

Redondo³

et al. 2011

AIP Conference Proceedings

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Articles you may be interested inDevelopment of dielectric barrier discharge plasma processing apparatus for mass spectrometry and thin film deposition Rev. Sci. Instrum. 78, 075103 (2007); 10.1063/1.2751408In situ mass spectrometry in a 10 Torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control Thickness metrology and end point control in W chemical vapor deposition process from SiH 4 / WF 6 using in situ mass spectrometry High-lying bound Rydberg states of excited Hg (6s6p 3 P 1 ) atoms from two-color resonance ionization mass spectroscopy AIP Conf.Abstract. In this paper we present and discuss a system developed in order to optimize the mass spectrometry process of an ion implanter. The system uses a PC to control and display the mass spectrum. The operator interacts with the I/O board, that interfaces with the computer and the ion implanter by a LabVIEW code. Experimental results are shown and the capabilities of the system are discussed.

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“…The high current ion implanter installed at LATR-IST, represented in Figure 1, is the model 1090 of Danfysik [6] [7].…”

Section: System Descriptionmentioning

confidence: 99%

Improvement of the Mass Spectrometry Process on an Ion Implantation

Lopes¹,

Rocha²,

Redondo³

et al. 2016

OJOp

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Mass spectrometry is an essential part of ion implantation. Therefore, in order to guarantee beam purity avoiding contamination of the implanted samples, a system was developed for the high current implanter at the Laboratory of Accelerators and Radiation Technologies (LATR) at the Instituto Superior Técnico. The system presented and discussed in this paper was developed using a LabVIEW code and uses a PC to control and display the mass spectrum. It also permits to save all data acquired for posterior analysis. In order to show some capabilities of this system, some experimental results are presented.

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A universal high-current implanter for surface modification of materials

Cited by 26 publications

References 3 publications

Amorphization Effects on Pure Titanium Using C⁺, O⁺ and Cr⁺ Ion Implantation

Amorphization Effects on Pure Titanium Using C⁺, O⁺ and Cr⁺ Ion Implantation

Optimization Of A Mass Spectrometry Process

Improvement of the Mass Spectrometry Process on an Ion Implantation

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A universal high-current implanter for surface modification of materials

Cited by 26 publications

References 3 publications

Amorphization Effects on Pure Titanium Using C+, O+ and Cr+ Ion Implantation

Amorphization Effects on Pure Titanium Using C+, O+ and Cr+ Ion Implantation

Optimization Of A Mass Spectrometry Process

Improvement of the Mass Spectrometry Process on an Ion Implantation

Contact Info

Product

Resources

About

Amorphization Effects on Pure Titanium Using C⁺, O⁺ and Cr⁺ Ion Implantation

Amorphization Effects on Pure Titanium Using C⁺, O⁺ and Cr⁺ Ion Implantation