A Universal Scalable Thermal Resistance Model for Compact Large-Signal Model of AlGaN/GaN HEMTs

Jia, Yonghao; Xu, Yuehang; Guo, Yong‐Xin

doi:10.1109/tmtt.2018.2854185

Cited by 36 publications

(18 citation statements)

References 23 publications

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“…The bias-dependent source-and drain-resistance are utilized to obtain more accurate results. The thermal sub-circuit is used to compute the transient self-heating behavior [40].…”

Section: Large-signal Modelmentioning

confidence: 99%

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

et al. 2019

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In this paper, a threshold voltage model for charge trapping effect of AlGaN/GaN HEMTs is proposed. The quiescent bias stresses are considered for well modeling the current collapse critical points in pulsed I-V curves. Moreover, the low-frequency dispersions due to the charge trapping effect are well disposed by using the proposed model, which are validated by the scattering parameters (S-parameters). Also, a trapping related parameter α is proposed in the model, which can be conveniently used to describe the current collapse critical points offset due to the different acceptor energy levels of the dopants in GaN buffer. Different from our previous threshold voltage model, the proposed model in this paper can accurately model the dynamic threshold voltage shift due to the fast capture and slow emission processes. The verifications are carried out by comparing with the transient measured drain current. The proposed model is also implemented into a large-signal model for further verifications. The improved large-signal model with the threshold voltage shift model is verified by 0.25 µm process AlGaN/GaN HEMTs with pulsed I-V, S-parameters, power sweep and load-pull measurements. More accurate agreements between measured and modeled results have been achieved in terms of output power (Pout), gain, and power added efficiency (PAE).

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“…The bias-dependent source-and drain-resistance are utilized to obtain more accurate results. The thermal sub-circuit is used to compute the transient self-heating behavior [40].…”

Section: Large-signal Modelmentioning

confidence: 99%

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

et al. 2019

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“…Le HEMT a été utilisé aussi dans plusieurs systèmes tels que les amplificateurs à haute puissance, les radars et les satellites, il se trouve aussi dans les capteurs et les dispositifs à radiofréquence [4]. En plus, la température de fonctionnement est un facteur très important, elle influence la fiabilité du HEMT, car la plupart de ses caractéristiques telle que la mobilité des électrons, la conductivité thermique, la vitesse de saturation et autres sont en fonction de la température [5]. Toutes ces caractéristiques ont tendance à se dégrader avec l'élévation de la température à cause de phénomène de l'auto-échauffement du transistor [6].…”

Section: Introductionunclassified

Optimisation du comportement thermique du transistor à haute mobilité d’électron (HEMT) par la méthode KA-CMA-ES

Amar¹,

Radi²,

Abdelkhalak³

2020

IncertFia

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“…5 Great progress has been made in the development of GaN-on-diamond HEMTs, and more than three-fold increase in power density compared with GaN-on-SiC HEMTs has been demonstrated. [6][7][8] A wideband small signal equivalent circuit model (SSECM) is the foundation of large-signal modeling in the bottom-up method [9][10][11][12] and can also be used to build noise models 13 ; meanwhile, the small signal parameters can provide an essential feedback for device manufactures, which makes small signal modeling of great significance to the development and application of the device technology.…”

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Zhou²,

Kong³

et al. 2019

Int J Numerical Modelling

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This paper presents the temperature dependence of small signal performance of GaN-on-diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison, a GaN-on-SiC device is also investigated. These results are important for the development and application of the GaN-on-diamond HEMT technology. KEYWORDSGaN-on-diamond, high electron mobility transistor (HEMT), small signal parameters, temperature dependence

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A Universal Scalable Thermal Resistance Model for Compact Large-Signal Model of AlGaN/GaN HEMTs

Cited by 36 publications

References 23 publications

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs

Optimisation du comportement thermique du transistor à haute mobilité d’électron (HEMT) par la méthode KA-CMA-ES

Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

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