2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) 2019
DOI: 10.1109/vlsi-tsa.2019.8804670
|View full text |Cite
|
Sign up to set email alerts
|

A Variability Source for Nanosheet GAA Transistors for sub-7nm Nodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

2023
2023
2023
2023

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
(2 citation statements)
references
References 1 publication
0
2
0
Order By: Relevance
“…In addition, due to the nano-meter device scaling, atomic level random variations have become prominent [4][5][6][7][8][9][10][11]. In this paper, we assumed that the random variables that have such pdf are the values for the six threshold voltages (Vth) for the six MOSFET devices that make up the 1bit cell for the 6Tstatic random access memory (SRAM).…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In addition, due to the nano-meter device scaling, atomic level random variations have become prominent [4][5][6][7][8][9][10][11]. In this paper, we assumed that the random variables that have such pdf are the values for the six threshold voltages (Vth) for the six MOSFET devices that make up the 1bit cell for the 6Tstatic random access memory (SRAM).…”
Section: Introductionmentioning
confidence: 99%
“…In this paper, we assumed that the random variables that have such pdf are the values for the six threshold voltages (Vth) for the six MOSFET devices that make up the 1bit cell for the 6Tstatic random access memory (SRAM). Those variations for the random variables are mainly caused by the atomic scaled ion-implantation dose fluctuation and gate-oxide electron trap/de-trap phenomena [4][5][6][7][8][9][10][11] and divided into the two random variations caused by (1) the Random Spatial Variation (RSV) and (2) the Random Temporal Variation (RTV). As a result, the tail length of the minimum operating voltage (VDDMIN) pdf distribution of the SRAM has become spatially and temporally longer [12] because both variations of the RSV and the RTV become larger.…”
Section: Introductionmentioning
confidence: 99%