A Verilog-A based semiclassical model for dual gated graphene field-effect transistor

Bardhan, Sudipta; Sahoo, Manodipan; Rahaman, Hafizur

doi:10.1109/icdcsyst.2016.7570619

Cited by 1 publication

(9 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, n is the number of data points. In the previous model [18], the RMS error was >17% for Meric [2] Table 7. The comparative study of RMS error validates the improvement of accuracy of the model.…”

Section: Model Validationmentioning

confidence: 83%

“…where W is the width of the channel and L is the channel length. v F = μ F /1 + F /F C , μ is the carrier mobility, F C is the critical field [22], F = V dsi /L is applied an electric field and dk is written as dk = g(E)dE (18) where g(E) = DOS.…”

Section: Model Descriptionmentioning

confidence: 99%

“…After substituting (18) and (29) into (17) and considering all energy levels it can be expressed in (33). After integrating (33) w.r.t.…”

Section: Scattering Effectsmentioning

confidence: 99%

“…16. In this work, we have calculated the root-mean-square (RMS) error and compared with a previously developed model [18]; this model with scattering and without scattering effects. RMS error can be calculated as…”

Section: Model Validationmentioning

confidence: 99%

“…Conventional metal–oxide–semiconductor field‐effect transistor models in [16, 17] explain these types of physical models. Previously, we developed a boltzmann transport equation (BTE)‐based model [18] without considering the scattering effects and impact of source access and drain access resistances due to net charges. Here, the GFET model has been modified to improve the accuracy of the model by considering the inelastic scattering effects which are important physical parameters.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Boltzmann transport equation‐based semi‐classical drain current model for bilayer GFET including scattering effects

Bardhan

Sahoo

Rahaman

2019

IET Circuits, Devices & Systems

Self Cite

View full text Add to dashboard Cite

In this study, a drain current model of bilayer graphene field-effect transistor (GFET) has been developed. The Boltzmann transport approach is considered to develop this model including the scattering effects. The effects of optical phonon scattering, acoustic phonon scattering and carrier-carrier scattering have been included. The effective voltages at top and back gates induce net mobile sheet charge density in graphene channel. Mobile sheet charge density helps to determine the quantum capacitance. Channel potential is derived from equivalent circuit. The electronic transport phenomena of carriers in channel are explained for the contribution of both electron and hole charge density. Finally, the expression of drain current is determined using the Boltzmann transport equation under non-equilibrium condition. Contact resistances at source and drain regions are considered to determine the accurate drain current. The small signal parameters of GFET are determined from drain current and net charge density, and finally using these parameters the authors have calculated the cutoff frequency of the model. We validate the model with several contemporary experimental results. Utilising the model, we have also explored the impact of back-gate bias, top-gate bias and channel length on the device characteristics.

show abstract

Section: Model Validationmentioning

confidence: 83%

Section: Model Descriptionmentioning

confidence: 99%

“…After substituting (18) and (29) into (17) and considering all energy levels it can be expressed in (33). After integrating (33) w.r.t.…”

Section: Scattering Effectsmentioning

confidence: 99%

Section: Model Validationmentioning

confidence: 99%