A vertical cavity light emitting InGaN quantum well heterostructure

Song, Yoon‐Kyu; Zhou, Hailong; Diagne, M.; Ozden, I.; Vertikov, A.; Nurmikko, A. V.; Carter-Coman, C.; Kern, R. S.; Kish, F. A.; Krames, Michael R.

doi:10.1063/1.124121

Cited by 75 publications

(41 citation statements)

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“…In this case the excitonic mode is too broad and at too low an energy to see polariton coupling effects. 5,6,9 The measured Q factors lie within the range of the best reported values ͑400-750͒ for similar MCs with double dielectric Bragg mirrors [7][8][9] but here the use of GaN substrates with low threading dislocation densities gives the added benefit of improved epitaxial quality. As will be apparent from the examples discussed, measurements at different points on the two MCs produced significantly different PL spectra.…”

supporting

confidence: 74%

“…5,6 The so-called fully hybrid approach exploits the well-established properties of high-reflectivity dielectric DBRs for both upper and lower mirrors, and offers the potential for higher finesse MCs. [7][8][9][10] Fabricating a MC of this type requires accessing the underside of the active region by removal of the substrate and buffer layers. Laser lift-off ͑LLO͒ from a sapphire substrate, 7,8 plasma etching of a SiC substrate, 9 and wet chemical etching of a silicon substrate 10 have all been employed to achieve this.…”

mentioning

confidence: 99%

“…[7][8][9][10] Fabricating a MC of this type requires accessing the underside of the active region by removal of the substrate and buffer layers. Laser lift-off ͑LLO͒ from a sapphire substrate, 7,8 plasma etching of a SiC substrate, 9 and wet chemical etching of a silicon substrate 10 have all been employed to achieve this. After substrate removal, further thinning of buffer layers is usually required to accurately define the desired cavity length, and it is essential to have a reliable method to achieve this objective.…”

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confidence: 99%

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( In , Ga ) N ∕ Ga N microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Rizzi

Edwards

Sèmond³

et al. 2007

Applied Physics Letters

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This version is available at https://strathprints.strath.ac.uk/9055/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. Comparable microcavities with 3 /2 ͑ϳ240 nm͒ active regions containing distributed ͑In,Ga͒N quantum wells, grown on GaN substrates and bounded by two dielectric mirrors, have been fabricated by two different routes: one using laser lift-off to process structures grown on GaN-on-sapphire templates and the second using freestanding GaN substrates, which are initially processed by mechanical thinning. Both exploit the properties of an Al 0.83 In 0.17 N layer, lattice matched to the GaN substrate and spacer layers. In both cases cavity quality factors Ͼ400 are demonstrated by measurements of the cavity-filtered room-temperature excitonic emission near 410 nm.

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confidence: 74%

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confidence: 99%

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confidence: 99%

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( In , Ga ) N ∕ Ga N microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Rizzi

Edwards

Sèmond³

et al. 2007

Applied Physics Letters

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“…These cracks in DBR could result in the reduction of reflectivity and increase in scattering loss. Recently, several groups have reported optically pumped GaN-based VCSELs mainly using three different kinds of vertical resonant cavity structure forms: (1) monolithic grown vertical resonant cavity consisting of epitaxially grown III-nitride top and bottom DBRs (all epitaxial DBR VCSEL), (2) vertical resonant cavity consisting of dielectric top and bottom DBR (dielectric DBR VCSEL), and (3) vertical resonant cavity consists of an epitaxially grown III-nitride top DBR and a dielectric DBR (hybrid DBR VCSEL) [1][2][3][4] .…”

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confidence: 99%

Recent progress on GaN-based vertical cavity surface emitting lasers

Lu¹,

Kao

Huang

et al. 2007

SPIE Proceedings

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We report the recent progress of GaN-based VCSELs with two different laser structures. One is a hybrid cavity structure comprised an epitaxial AlN/GaN DBR, an InGaN/GaN MQW active region and a top dielectric DBR. Another is a dielectric cavity structure comprised an InGaN/GaN MQW layer sandwiched by two dielectric DBRs. Both lasers achieved laser action under optical pumping at the room temperature with narrow linewidth. The detailed characteristics of VCSELs will be reported. The status of the electrically pumped VCSEL will also be presented.

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“…The emission linewidth significantly decreased from 2.5 to 0.1 nm after the threshold condition. Thereafter, Song et al demonstrated a VCSEL structure consisting of InGaN multiple quantum wells (MQWs) and ten-pair SiO 2 /HfO 2 top and bottom DBR by using laser lift-off technology [19]. Since the reflectivity of top and bottom DBRs were 99.5% and 99.9%, respectively, the cavity Q-factor is larger than 600 in their experiments.…”

Section: Introductionmentioning

confidence: 99%

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

Chen

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaNbased VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7• with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 × 10 −2 was measured.Index Terms-Distributed Bragg reflector (DBR), GaN, electrical pumping, superlattice, vertical-cavity surface-emitting laser (VCSEL).

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A vertical cavity light emitting InGaN quantum well heterostructure

Cited by 75 publications

References 11 publications

( In , Ga ) N ∕ Ga N microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

( In , Ga ) N ∕ Ga N microcavities with double dielectric mirrors fabricated by selective removal of an (Al,In)N sacrificial layer

Recent progress on GaN-based vertical cavity surface emitting lasers

Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

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