2022
DOI: 10.1364/oe.463394
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A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band

Abstract: In this work, we have reported a vertical CsPbBr3/ZnO heterojunction photodetector for photo-sensing lights from UV to visible band. The ZnO thin film is deposited on the c-sapphire substrate through a molecular beam epitaxy (MBE) technique, and then the CsPbBr3 thin film is synthesized on the as-prepared ZnO film layer by using a solution processing method. The as-prepared CsPbBr3/ZnO heterostructure presents type-II energy band structure induced by the energy band offset effect, which can promote the separat… Show more

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Cited by 19 publications
(8 citation statements)
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“…When contacted with each other in a thermodynamical equilibrium, a depletion layer toward the CsPbBr 3 /GaN interface would be created, thus contributing to the formation of a powerful built-in electric field with the direction of the CsPbBr 3 pointing to GaN. 45,52,53 When reversely biased, the fabricated CsPbBr 3 /GaN heterojunction can be used to detect the incoming lights with photon energies larger than E g,CsPbBr 3 . When illuminated by UV light, the light with energy larger than E g,CsPbBr 3 may be absorbed by the GaN substrate and CsPbBr 3 MW simultaneously.…”
Section: Resultsmentioning
confidence: 99%
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“…When contacted with each other in a thermodynamical equilibrium, a depletion layer toward the CsPbBr 3 /GaN interface would be created, thus contributing to the formation of a powerful built-in electric field with the direction of the CsPbBr 3 pointing to GaN. 45,52,53 When reversely biased, the fabricated CsPbBr 3 /GaN heterojunction can be used to detect the incoming lights with photon energies larger than E g,CsPbBr 3 . When illuminated by UV light, the light with energy larger than E g,CsPbBr 3 may be absorbed by the GaN substrate and CsPbBr 3 MW simultaneously.…”
Section: Resultsmentioning
confidence: 99%
“…As the device is illuminated by visible light, the incoming photons are principally absorbed by the CsPbBr 3 sample, thus contributing to the observed photocurrent. 31,47,52,54 To evaluate the photosensitive capabilities of our fabricated n-CsPbBr 3 MW/p-GaN heterojunction photodetector, we calculated the important figure-of-merit parameters, including spectral responsivity (R), specific detectivity (D*) and external quantum efficiency (EQE). The R is calculated below, 35,48,55…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Compared with nanofilms that have low charge separation efficiency owing to quantum confinement effects, CsPbBr 3 microcrystals have a lower trap density, higher carrier mobility, longer carrier diffusion length, and superior performance in terms of defect tolerance and photoelectric conversion, making this a promising material in the field of photoelectric photodetectors (PDs). [1][2][3][4][5][6][7] Heterojunction PDs can compensate for the shortcomings of individual material performance and have higher sensitivity and light response speed compared with photoconductive PDs. [8,9] In heterojunction PDs, the heterojunction acts as the core component for converting optical signals into electrical signals.…”
Section: Introductionmentioning
confidence: 99%
“…There is also an increasing number of studies considering photoconductive perovskite-containing materials as elements of artificial synapses [ 40 , 41 , 42 , 43 , 44 ]. The published results on the effect of perovskite nanocrystals on the photoconductivity of ZnO mainly concern monohalide perovskites with an organic [ 45 , 46 , 47 , 48 , 49 ] or inorganic cation [ 4 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ], while the use of mixed halide perovskites as sensitizers use is also discussed in the literature [ 44 , 58 , 59 , 60 ], however has not been systematically studied so far.…”
Section: Introductionmentioning
confidence: 99%