A vertical WSe<sub>2</sub>–MoSe<sub>2</sub> p–n heterostructure with tunable gate rectification

Liu, Hailing; Hussain, Sajjad; Ali, Asif; Naqvi, Bilal Abbas; Vikraman, Dhanasekaran; Jeong, Woonyoung; Song, Wooseok; An, Ki‐Seok; Jung, Jongwan

doi:10.1039/c8ra03398f

Cited by 27 publications

(23 citation statements)

References 28 publications

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“…Achieved values for the ideality factor in the n-InGaAs−BP heterojunction diode are higher than that of an ideal diode (η = 1), which is attributed to mainly the trap state and the resistance of the heterojunction in the interface. 32 The ideality factor of ∼1.6 at V G = 40 V for the n-InGaAs−BP heterojunction diode is comparable to the ideality factors of previously reported heterojunction diodes comprising WSe 2 − MoSe 2 (η = ∼1.5), 46 BP−WS 2 (η = ∼1.7), 47 and BP−MoS 2 (η = ∼2.7). 32 The gate-tunable rectifying behavior of n-InGaAs−BP heterojunction diodes is caused by the electrostatic inversion of the BP (Figure S6c), where the Fermi level of BP is modulated by the gate voltage.…”

Section: ■ Results and Discussionsupporting

confidence: 84%

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Lee

Lim

et al. 2019

ACS Appl. Mater. Interfaces

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Semiconductor heterostructures have enabled numerous applications in diodes, photodetectors, junction field-effect transistors, and memory devices. Two-dimensional (2D) materials and III–V compound semiconductors are two representative materials providing excellent heterojunction platforms for the fabrication of heterostructure devices. The marriage between these semiconductors with completely different crystal structures may enable a new heterojunction with unprecedented physical properties. In this study, we demonstrate a multifunctional heterostructure device based on 2D black phosphorus and n-InGaAs nanomembrane semiconductors that exhibit gate-tunable, photoresponsive, and programmable diode characteristics. The device exhibits clear rectification with a large gate-tunable forward current, which displays rectification and switching with a maximum rectification ratio of 4600 and an on/off ratio exceeding 105, respectively. The device also offers nonvolatile memory properties, including large hysteresis and stable retention of storage charges. By combining the memory and gate-tunable rectifying properties, the rectification ratio of the device can be controlled and memorized from 0.06 to 400. Moreover, the device can generate three different electrical signals by combining a photoresponsivity of 0.704 A/W with the gate-tunable property, offering potential applications, for example, multiple logic operator. This work presents a heterostructure design based on 2D and III–V compound semiconductors, showing unique physical properties for the development of multifunctional heterostructure devices.

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Section: ■ Results and Discussionsupporting

confidence: 84%

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Lee

Lim

et al. 2019

ACS Appl. Mater. Interfaces

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“…In Figure c, the core level peaks for 5p 3/2 , W 4f 5/2 , and W 4f 7/2 binding energies are fitted (brown line) and centered at 39.49, 36.12, and 33.96 eV, respectively, in agreement with W 4+ in WSe 2 . Figure d shows the single peak of Se fitted (brown line) and centered at 56.50 eV, which can be divided and attributed to the Se 3d 3/2 and Se 3d 5/2 binding energies with peak positions at 56.72 and 56.33 eV, respectively …”

Section: Resultsmentioning

confidence: 99%

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Patel¹,

Machhi²,

Chauhan³

et al. 2019

ACS Appl. Mater. Interfaces

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The solar response ability and low-cost fabrication of the photoanode are important factors for the effective output of the photoelectrochemical system. Modification of the photoanode by which its ability to absorb irradiation can be manipulated has gained tremendous attention. Here, we demonstrated the MoSe 2 , WSe 2 , and MoSe 2 /WSe 2 nanocrystal thin films prepared by the liquid-phase exfoliated and electrophoresis methods. Atomic force microscopy and high-resolution transmission electron microscopy show that the liquid exfoliated nanocrystals have a few layered dimensions with good crystallinity. Scanning electron microscopy demonstrated uniform distribution and randomly oriented nanocrystals, having a homogeneous shape and size. X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectra confirm the equal contribution of MoSe 2 and WSe 2 nanocrystals in the formation of the MoSe 2 /WSe 2 heterojunction. Because of superior absorption of MoSe 2 /WSe 2 heterojunction in the visible region and type-II heterojunction band alignment, in situ measurement of heterojunction electrode shows almost 1.5 times incident photo-to-current conversion efficiency and photoresponsivity in comparison to individual material electrodes. Our result clearly indicates the influence of heterojunction formation between liquid exfoliated nanocrystals on effective separation of photogenerated exciton and enhances charge carrier transfer, which leads to the improvement in photoelectrochemical performance. Liquid exfoliated nanosheet-based heterojunction is attractive as efficient photoanodes for the photoelectrochemical systems.

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“…Remarkably, no obvious shift of the Te 3d 3/2 , Te 3d 5/2 , and Ge 3d signals is detected, which confirms that the formation of GeTe bond is not dominant on the heterostructure interface. [ 33,34 ] The accurate comparison of spectra between Te film surface without etching and the interface mixing state with 36 s etching level is shown in Figure 1f, which further points to no shift of the Te characteristic peaks between that near the interface of Te/Ge and pure Te. The barely visible XPS peak of Te oxide indicates the Te film possesses excellent air stability, which has shown quite a difference to previous work.…”

Section: Resultsmentioning

confidence: 86%

Large‐Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High‐Performance Self‐Powered Photodetector

Zheng

Guo

et al. 2021

Advanced Optical Materials

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As an attractive elemental semiconductor material, p‐type tellurium (Te) with a narrow bandgap provides high carrier mobility, strong light–matter interactions in a wide spectral range, and good chemical stability, which enlightens the potential in optoelectronic devices. However, the applications are impeded by weak carrier separation and vague potential in scaling‐up. In this work, the integration of Te and conventional semiconductor germanium (Ge) is designed. Through molecular beam epitaxy (MBE) method, large‐area and uniform Te films with high crystallinity are directly deposited on the Ge substrates. The difference in work function between Te and Ge layer leads to a built‐in electric field, which can effectively enhance the carrier separation. As a result, a self‐powered splendid photovoltaic performance is observed in the MBE grown Te/Ge vertical heterojunction with current on/off ratio over 103, responsivity (R) 523 mA W−1, and specific detectivity (D*) 9.50 × 1010 cm Hz1/2 W−1 when illuminated by near‐infrared light (980 nm, 2.15 µW cm−2). Furthermore, excellent stability and high response speed of the ultrathin heterostructure offer a significant application value for multipurpose photoelectric devices.

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A vertical WSe₂–MoSe₂ p–n heterostructure with tunable gate rectification

Cited by 27 publications

References 28 publications

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Large‐Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High‐Performance Self‐Powered Photodetector

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A vertical WSe2–MoSe2 p–n heterostructure with tunable gate rectification

Cited by 27 publications

References 28 publications

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes

Electrophoretically Deposited MoSe2/WSe2 Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse

Large‐Area Tellurium/Germanium Heterojunction Grown by Molecular Beam Epitaxy for High‐Performance Self‐Powered Photodetector

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Product

Resources

About

A vertical WSe₂–MoSe₂ p–n heterostructure with tunable gate rectification

Electrophoretically Deposited MoSe₂/WSe₂ Heterojunction from Ultrasonically Exfoliated Nanocrystals for Enhanced Electrochemical Photoresponse