A W-band detector with high tangential signal sensitivity and voltage sensitivity

Xie, Ling; Zhang, Yonghong; Yang, Fan; Xu, Conghai; Jiao, Y.

doi:10.1109/icmmt.2010.5525220

Cited by 7 publications

(9 citation statements)

References 7 publications

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“…Device Responsivity (mV/mW) TSS/NEP (dBm/pW/sqrt(Hz)) [5] Sb diode 10,000 peak [6] Schottky (VDI) 6000 peak −55/−45 [10] HSCH 9161 800-2200 −49 [11] HSCH 9161 3800 peak −49 [12] MZBD 9161 500 (11,800 peak) −38 [13] MZBD 9161 700 (1000 peak) [15] Schottky (VDI) >2000 −33 [16] Schottky (VDI) 4000 1.5 [18] 65 nm CMOS 80-200 200-400 [19] SiGe HBT 12,000 2. 5-4.5 In the present article, we focus on low-cost solutions in the low end of THz presenting three different detectors in W-band, which have been designed and measured.…”

Section: Referencementioning

confidence: 99%

Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Gutiérrez¹,

Zeljami

Pascual

et al. 2019

Electronics

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This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.

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Section: Referencementioning

confidence: 99%

Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Gutiérrez¹,

Zeljami

Pascual

et al. 2019

Electronics

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“…Antimony (Sb) heterostructure backward diodes offer better noise performance with easier matching to 50 Ohm [5] compared to GaAs Schottky diodes, but may not always be easily accessible or available as discrete components [6]. Series 9161 diodes (Keysight HSCH and MACOM-Metelics MZBD) models are frequently used for hybrid detectors below the W-band [7][8][9], though also in the W-band [10][11][12][13]. Zero-bias Schottky diodes from ACST (Advanced Compound Semiconductor Technologies GmbH) (https://acst.de/) operating as power sensors have been reported in [14].…”

Section: Introductionmentioning

confidence: 99%

“…freq (2.000GHz to 50.00GHz) SP1.SP.S(1,1) SP1.SP.S(7,7) freq (75.00GHz to 110.0GHz) S11_cor freq (2.000GHz to 110.0GHz) SP3.SP.S(1,1) .SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) S11, Modelo freq (2.000GHz-110.0 GHz) S11, Medidas freq (2.000GHz-50.00 GHz) S11, Medidas freq (75.00GHz-110.0 GHz) .00GHz to 110.0GHz) SP2.SP.S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) SP2.SP.S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) freq (2.000GHz to 50.00GHz) SP1.SP.S(1,1) SP1.SP.S(7,7) freq (75.00GHz to 110.0GHz) S11_cor freq (2.000GHz to 110.0GHz) SP3.SP.S(1,1) .S(5,5) new_total SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP.S(5,5) new_total SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) S11, Modelo freq (2.000GHz-110.0 GHz) S11, Medidas freq (2.000GHz-50.00 GHz) S11, Medidas freq (75.00GHz-110.0 GHz) .S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) SP2.SP.S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) S 11 (dB) Modeling Freq (2GHz-110GHz) S 11 (dB) Measurement Freq (75GHz-110GHz) S 11 (dB) Measurement Freq (2GHz-50GHz) -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 -0.6 0.6 freq (75.00GHz to 110.0GHz) SP2.SP.S(1,2) SP2.SP.S(10,9) freq (2.000GHz to 50.00GHz) SP1.SP.S(1,2) SP1.SP.S(7,8) freq (2.000GHz to 110.0GHz) SP3.SP.S(1,2) .SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) S12, Modelo freq (2.000GHz-110.0 GHz) S12, Medidas freq (2.000GHz-50.00 GHz) S12, Medidas freq (75.00GHz-110.0 GHz) .00GHz to 110.0GHz) SP2.SP.S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) SP2.SP.S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) freq (2.000GHz to 50.00GHz) SP1.SP.S(1,1) SP1.SP.S(7,7) freq (75.00GHz to 110.0GHz) S11_cor freq (2.000GHz to 110.0GHz) SP3.SP.S(1,1) .SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) SP2.SP.S(5,5) S11_new_total SP1.SP.S(1,1) S11, Modelo freq (2.000GHz-110.0 GHz) S11, Medidas freq (2.000GHz-50.00 GHz) S11, Medidas freq (75.00GHz-110.0 GHz) .S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) SP2.SP.S(2,1) SP2.SP.S(10,9) SP1.SP.S(2,1) SP1.SP.S(8,7) SP3.SP.S(2,1) S 12 (dB) Modeling Freq (2GHz-110GHz) S 12 (dB) Measurement Freq (75GHz-110GHz) S 12 (dB) Measurement Freq (2GHz-50GHz) Cont. Electronics 2019, 8, 696 6 of 13 Electronics 2019, 8, x FOR PEER REVIEW 6 of Modelled and measured [S]-parameters of the unbiased diode (0 V) after the de-embedding in the wire bonding configuration.…”

mentioning

confidence: 99%

Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

Gutiérrez¹,

Zeljami

Fernández

et al. 2019

Electronics

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This paper presents and discusses the careful modeling of a Zero Biased Diode, including low-frequency noise sources, providing a global model compatible with both wire bonding and flip-chip attachment techniques. The model is intended to cover from DC up to W-band behavior, and is based on DC, capacitance versus voltage, as well as scattering and power sweep harmonics measurements. Intensive use of 3D EM (ElectroMagnetic) simulation tools, such as HFSS TM , was done to support Zero Biased Diode parasitics modeling and microstrip board modeling. Measurements are compared with simulations and discussed. The models will provide useful support for detector designs in the W-band.

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“…A passive diode power detector is also extensively used at the MMW band, and much more effective than the active one at terahertz (THz) band [4]. In addition, passive detector's advantages include low flicker noise and insensitivity to ambient temperature variation [6][7][8][9][10][11][12][13][14][15][16][17]. At present, the best candidate for passive detector design is Sb-diode.…”

Section: Introductionmentioning

confidence: 99%

“…HRL Laboratories owns the Sb-diode detector patent, and there is no commercial Sb-diode released commercially. Thus, plenty of works have been carried out with Schottky diode rather than Sb-diode [10][11][12][13][14][15][16][17]. Among them, the mostly used diodes are HSCH-9161 from Avago [10][11][12][13], which is actually the same as MZBD-9161 from Aeroflex [14], and zero bias Schottky diode (ZBD) from Virginia Diodes, Inc. (VDI) [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Design of a full W‐band detector based on Schottky diode with quartz substrate

Guo

Cheng²,

et al. 2019

IET Microwaves, Antennas & Propagation

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A power detector based on Schottky diode with a quartz substrate is proposed in this study. A three‐dimensional model of the Schottky diode is built for accurate performance evaluation. A broadband input DC grounding circuit is designed based on two sets of radial stubs. An output chocking circuit is implemented using a single compact microstrip resonator cell, which features compact size and broad stopband. Input and output matching circuits are also introduced to achieve flat frequency response. Measured results agree well with simulated ones. The voltage sensitivity is about 6000–9500 mV/mW with −30 dBm drive power at the full W‐band (75–110 GHz). The detector also has outstanding temperature stability. The output voltage varies <6.3% with −3 dBm drive power when ambient temperature changes from −40 to +60°C.

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A W-band detector with high tangential signal sensitivity and voltage sensitivity

Cited by 7 publications

References 7 publications

Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Accurately Modeling of Zero Biased Schottky-Diodes at Millimeter-Wave Frequencies

Design of a full W‐band detector based on Schottky diode with quartz substrate

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