A wafer-level Sn-rich Au–Sn intermediate bonding technique with high strength

Fang, Zhiqiang; Mao, Xu; Yang, Jinling; Yang, Fuhua

doi:10.1088/0960-1317/23/9/095008

Cited by 21 publications

(12 citation statements)

References 10 publications

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“…In following step, IC sockets or controllers were soldering on developed connectors . However, few fiber‐ and fabric‐based conductive materials could withstand high temperature about 280 °C, which is the lowest melting temperature of soldering . Low temperature solders can decrease bonding temperature significantly and increase flexibility and component reliability .…”

Section: Stimes Architecture and System Integrationmentioning

confidence: 99%

Smart Textile‐Integrated Microelectronic Systems for Wearable Applications

et al. 2019

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The programmable nature of smart textiles makes them an indispensable part of an emerging new technology field. Smart textile‐integrated microelectronic systems (STIMES), which combine microelectronics and technology such as artificial intelligence and augmented or virtual reality, have been intensively explored. A vast range of research activities have been reported. Many promising applications in healthcare, the internet of things (IoT), smart city management, robotics, etc., have been demonstrated around the world. A timely overview and comprehensive review of progress of this field in the last five years are provided. Several main aspects are covered: functional materials, major fabrication processes of smart textile components, functional devices, system architectures and heterogeneous integration, wearable applications in human and nonhuman‐related areas, and the safety and security of STIMES. The major types of textile‐integrated nonconventional functional devices are discussed in detail: sensors, actuators, displays, antennas, energy harvesters and their hybrids, batteries and supercapacitors, circuit boards, and memory devices.

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Section: Stimes Architecture and System Integrationmentioning

confidence: 99%

Smart Textile‐Integrated Microelectronic Systems for Wearable Applications

et al. 2019

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“…For fiber or yarn strain sensors, the mechanical bonding can be thread-to-thread knotting, or embroidery [103,104], stitching [72], or interlacing. Physical bonding includes soldering [105], adhesive bonding [96] and so on. The advantages and disadvantages of different interconnection methods are summarized in Table 7.…”

Section: Interconnection and Packagingmentioning

confidence: 99%

Review of Fiber- or Yarn-Based Wearable Resistive Strain Sensors: Structural Design, Fabrication Technologies and Applications

Huang

Xiong

2022

Textiles

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Flexible textile strain sensors that can be directly integrated into clothing have attracted much attention due to their great potential in wearable human health monitoring systems and human–computer interactions. Fiber- or yarn-based strain sensors are promising candidate materials for flexible and wearable electronics due to their light weights, good stretchability, high intrinsic and structural flexibility, and flexible integrability. This article investigates representative conductive materials, traditional and novel preparation methods and the structural design of fiber- or yarn-based resistive strain sensors as well as the interconnection and encapsulation of sensing fibers or yarns. In addition, this review summarizes the effects of the conductive materials, preparation strategy and structures on the crucial sensing performance. Discussions will be presented regarding the applications of fiber- or yarn-based resistive strain sensors. Finally, this article summarizes the bottleneck of current fiber- or yarn-based resistive strain sensors in terms of conductive materials, fabrication techniques, integration and performance, as well as scientific understanding, and proposes future research directions.

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“…Au-Sn is a widely used material system for electronic packaging for both discrete device packaging and wafer-level packaging [17]- [20]. While the Sn enables a relatively lowtemperature bonding, IMCs of the Au-Sn material system provides mechanically reliable and robust bond [21]- [23].…”

Section: Introductionmentioning

confidence: 99%

Wafer-Level Low-Temperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation

Temel

Kalay

Akın

2021

J. Microelectromech. Syst.

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A novel solid-liquid inter-diffusion (SLID) bonding process is developed allowing to use thin layers of the Au-Sn material in wafer-level microelectromechanical systems (MEMS) packaging while providing a good bonding strength. The bond material layers are designed to have a robust bond material configuration and a metallic bond with a high re-melting temperature, which is an important advantage of SLID bonding or with its alternative name, transient liquid phase (TLP) bonding. The liquid phase in SLID bonding is the gold-rich eutectic liquid of the Au-Sn material system, where the bonding temperature is selected to be 320 • C for a reliable bonding. The average shear strength of the bonds is measured to be 38±1.8 MPa. The hermeticity of the package is tested with the He-Leak test according to MIL-STD 883, which yields a leak value lower than 0.1 × 10 −9 at m.cm 3 /s. The vacuum inside the package without a getter is calculated as 2.5 mbar after cap wafer thinning. The vacuum level is well preserved after post-processes such as annealing at 400 • C and the dicing process. These results verify that thin layers of Au-Sn materials can be used reliably with the SLID or TLP bonding technique using the new approach proposed in this study.

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A wafer-level Sn-rich Au–Sn intermediate bonding technique with high strength

Cited by 21 publications

References 10 publications

Smart Textile‐Integrated Microelectronic Systems for Wearable Applications

Smart Textile‐Integrated Microelectronic Systems for Wearable Applications

Review of Fiber- or Yarn-Based Wearable Resistive Strain Sensors: Structural Design, Fabrication Technologies and Applications

Wafer-Level Low-Temperature Solid-Liquid Inter-Diffusion Bonding With Thin Au-Sn Layers for MEMS Encapsulation

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