2016
DOI: 10.1088/0960-1317/26/9/095013
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A wafer mapping technique for residual stress in surface micromachined films

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Cited by 20 publications
(17 citation statements)
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“…Asides semiconductors, other issues such as the influence of different process conditions on mechanical properties of electroplated materials and the control of the integrity of the electroplated layers as it relates to further processing have also been the raised [86,87], but not discussed in this communication.…”
Section: Post-growth Treatmentmentioning
confidence: 99%
See 1 more Smart Citation
“…Asides semiconductors, other issues such as the influence of different process conditions on mechanical properties of electroplated materials and the control of the integrity of the electroplated layers as it relates to further processing have also been the raised [86,87], but not discussed in this communication.…”
Section: Post-growth Treatmentmentioning
confidence: 99%
“…techniques such as [77], MOCVD [84], and CSS [85] also require such treatments, as it is evident in the performances of the applications utilised for References [81][82][83]. Asides semiconductors, other issues such as the influence of different process conditions on mechanical properties of electroplated materials and the control of the integrity of the electroplated layers as it relates to further processing have also been the raised [86,87], but not discussed in this communication.…”
Section: All-electroplated Photovoltaic Devicesmentioning
confidence: 99%
“…The integration of appropriately designed test devices in the layout of a MEMS reticle offers a highly sensitive approach to determine residual tensile or compressive stresses in different layers of a given system of different materials. The bending, displacement, or rotation of the test devices is measured optically or by SEM and correlated to analytical or numerical models to characterize the stress distribution in the layers of interest. The stated detectable stress variations are typically smaller when compared with 20 MPa, but for optimized devices even as small as 1.5 MPa …”
Section: Micro‐ and Nanomechanical Stress And Strain Measurementsmentioning
confidence: 99%
“…The test structure architecture used in this work is shown in Fig. 1 [25,26] and consists of two expansion arms and a pointer arm of width (W=8 µm) underneath which a sacrificial layer has been removed. Depending on whether the arms are in compression or tensile the pointer arm rotates in a different direction.…”
Section: Test Chip Design and Fabricationmentioning
confidence: 99%