The adhesion of protective diamond films to cemented carbide substrates used in fabrication of space drilling tools can be improved by the inclusion of β-SiC interlayers. Conventional CVD methods for depositing the SiC interlayers lead to interface coarsening and heat stress resulting from high temperatures of deposition. In this work, a mid-frequency magnetron sputtering technique is used to deposit the β-SiC interlayer at lower temperatures, and the effects of deposition temperature on the microstructure and properties of the interlayer and final diamond film are assessed. The results show that the β-SiC interlayers deposited at temperatures exceeding 300°C possess high compactness and crystallinity. Increasing crystal β-SiC phase has beneficial effects on the nucleation and growth of diamond film. Based on the experimental data, a six-step reaction model is proposed to show the mechanism by which the β-SiC interlayer promotes the nucleation and growth of diamond films.