2003
DOI: 10.1016/s0021-9991(02)00032-3
|View full text |Cite
|
Sign up to set email alerts
|

A WENO-solver for the transients of Boltzmann–Poisson system for semiconductor devices: performance and comparisons with Monte Carlo methods

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

4
144
1
1

Year Published

2006
2006
2021
2021

Publication Types

Select...
4
2

Relationship

1
5

Authors

Journals

citations
Cited by 120 publications
(150 citation statements)
references
References 19 publications
4
144
1
1
Order By: Relevance
“…In particular, we demonstrate the capability of our WENO-BTE scheme [3] in giving reliable results for 2D realistic devices. We consider MESFET and MOSFET devices which have served as benchmarks for several other approximating models to device transport simulation, such as hydrodynamic, driftdiffusion, and energy transport solvers that have typically been compared to Monte Carlo results for solving the BTE [1,7].…”
Section: Introductionmentioning
confidence: 81%
See 4 more Smart Citations
“…In particular, we demonstrate the capability of our WENO-BTE scheme [3] in giving reliable results for 2D realistic devices. We consider MESFET and MOSFET devices which have served as benchmarks for several other approximating models to device transport simulation, such as hydrodynamic, driftdiffusion, and energy transport solvers that have typically been compared to Monte Carlo results for solving the BTE [1,7].…”
Section: Introductionmentioning
confidence: 81%
“…We adopt the same fifth order finite difference WENO scheme coupled with a third order TVD Runge-Kutta time discretization to solve (1.10) as that used in our previous work [3]. The fifth order finite difference WENO scheme was first designed in [17], and the third order TVD Runge-Kutta time discretization was first proposed in [24].…”
Section: The Weno-bte Solvermentioning
confidence: 99%
See 3 more Smart Citations