A Wide-Dynamic Range (-40 °C to 180 °C) Active Wireless MEMS Temperature Sensor With 7m °C Sensitivity

Ji, Shuwei; Akhkandi, Parvin; Qi, Yu; Abdolvand, Reza; Lavasani, Hossein Miri

doi:10.1109/jsen.2023.3262735

IEEE Sensors J.

2023

DOI: 10.1109/jsen.2023.3262735

|View full text |Cite

A Wide-Dynamic Range (-40 °C to 180 °C) Active Wireless MEMS Temperature Sensor With 7m °C Sensitivity

Shuwei Ji

Parvin Akhkandi

Yu Qi

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

MoS₂ high temperature sensitive element with a single Si₃N₄ protective layer

Kong,

Li,

Wang

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Temperature sensors find extensive applications in industrial production, defense, and military sectors. However, conventional temperature sensors are limited to operating temperatures below 200°C and are unsuitable for detecting extremely high temperatures. In this paper, a method for thermal protection of molybdenum disulfide (MoS2) films is proposed and a MoS2 high temperature sensor is prepared. By depositing a monolayer of Si3N4 onto MoS2, not only is the issue of high-temperature oxidation effectively addressed, but also the contamination by impurities that could potentially compromise the performance of MoS2 is prevented. Moreover, the width of the Schottky barrier of metal/MoS2 is reduced by using PECVD deposition of 400 nm Si3N4 to form an ohmic contact, which improves the electrical performance of the device by three orders of magnitude. The sensor exhibits a positive temperature coefficient measurement range of 25 to 550°C, with a maximum temperature coefficient of resistance (TCR) of 0.32%·°C-1. The thermal protection method proposed in this paper provides a new idea for the fabrication of high-temperature sensors, which is expected to be applied in the high-temperature field.

show abstract

MoS₂ high temperature sensitive element with a single Si₃N₄ protective layer

Kong,

Li,

Wang

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

A Wide-Dynamic Range (-40 °C to 180 °C) Active Wireless MEMS Temperature Sensor With 7m °C Sensitivity

Cited by 1 publication

References 31 publications

MoS₂ high temperature sensitive element with a single Si₃N₄ protective layer

MoS₂ high temperature sensitive element with a single Si₃N₄ protective layer

Contact Info

Product

Resources

About

A Wide-Dynamic Range (-40 °C to 180 °C) Active Wireless MEMS Temperature Sensor With 7m °C Sensitivity

Cited by 1 publication

References 31 publications

MoS2 high temperature sensitive element with a single Si3N4 protective layer

MoS2 high temperature sensitive element with a single Si3N4 protective layer

Contact Info

Product

Resources

About

MoS₂ high temperature sensitive element with a single Si₃N₄ protective layer

MoS₂ high temperature sensitive element with a single Si₃N₄ protective layer