A wide range, high yield and good performance pHEMT switch for MMIC phase shifter

Menbari, Babak; Dousti, Massoud; Hajghassem, Hassan

doi:10.1080/00207217.2013.869768

Cited by 8 publications

(3 citation statements)

References 5 publications

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“…In Figure , the rate of power linearity for input power and also P 1 dB is shown. This diagram shows that the new method has no significant influence on the switch linearity, and it can also be used in power applications .…”

Section: Proposed Methodsmentioning

confidence: 93%

A wide range monolithic pHEMT SPDT switch

Menbari

Dousti

Hajghassem

2014

Micro & Optical Tech Letters

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In this study, we propose the design, fabrication, and measurement results of a −6 V single pole double throw (SPDT) switch in the frequency band of DC‐20 GHz. We use a pseudomorphic high electron mobility transistor (pHEMT) GaAs technology. This technology has a gate width of 0.15 μm and a cutoff frequency of 85 GHz. A high yield and good performance switch based on pHEMT transistor is presented for using in SPDT circuit. In this method, we can reduce the off mode capacitor of transistor (Coff) and optimize the transistor in switch mode. Therefore, this method increases the transistor isolation in “off” mode with no change in the resistance of transistor in “on” mode (Ron). Measurement results show that the insertion loss is 1 dB with variation of ±0.1 dB in the frequency bandwidth and its isolation is better than 35 dB. The linear power range of the circuit is 28 dBm. The chip size is 0.2 mm2 and very low power consumption of 25 μ w is achieved. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:1454–1458, 2014

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Section: Proposed Methodsmentioning

confidence: 93%

A wide range monolithic pHEMT SPDT switch

Menbari

Dousti

Hajghassem

2014

Micro & Optical Tech Letters

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“…Yang et al [3] reported a digital phase shifter operating at 2.1~2.7 GHz, which sacrifices the input/output VSWR and chip area to obtain a small RMS phase error of 1.67°, but the chip area is large at 9 . In order to solve the above problems of S-band digital phase shifters, a 6-bit digital phase shifter operating at 2.5-3.3 GHz with an integrated digital driver is designed based on 0.5 GaAs pHEMT process [4]. The phase shifter has a high degree of chip integration, in which the embedded LC and embedded low-pass-resonant network-type topology for the small-bit phase-shifter unit reduce the chip area.…”

Section: Introductionmentioning

confidence: 99%

Design of 2.5-3.3 GHz high-precision compact digital phase shifter

Zhan,

Zhang,

Pei

2024

J. Phys.: Conf. Ser.

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A 6-bit MMIC digital phase shifter, designed using a 0.5 μm GaAs pHEMT process, has been developed to enhance the search capability of phased array systems for targets. The chip structure of the phase shifter is well-designed, and the improved embedded topology of the 45° and 90° phase shifting units effectively reduces the overall insertion loss. To reduce the chip size, the phase shifting units with smaller layouts of 5.625°, 11.25°, and 22.5° are combined, greatly reducing the chip area. The results show that within the frequency range of 2.5-3.3 GHz, the input and output VSWR is less than 1.38, the insertion loss is less than 4.3 dB, the root mean square phase error of the phase shifting state is less than 1.43°, and the absolute value of the amplitude fluctuation for different states is less than 0.52 dB. The compact chip structure measures 2.45 mm×1.08 mm.

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“…RF MEMS‐based devices include switches, inductors, capacitors, varactors, and phase shifters. Phase shifters are the main components of the phased array antennas for radar applications and are classified into analog and digital types 11–14 . Analog MEMS phase shifters change the phase from 0° to 360° continuously, and their structure contains MEMS varactors 15 .…”

Section: Introductionmentioning

confidence: 99%

A low‐loss compact six‐bit DMTL phase shifter for phased array antenna applications

Teymoori

Dousti

Afrang

2020

Circuit Theory & Apps

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A phase shifter is one of the main components of radars and phased array systems. In this paper, a novel three-state two-bridge unit cell is presented for a compact low-loss six-bit distributed microelectromechanical systems (MEMS) transmission line (DMTL) phase shifter. The proposed unit cell includes a coplanar waveguide (CPW) transmission line, a MEMS bridge on the signal line, two metal-air-metal (MAM) capacitors on a glass substrate, and two additional electrodes under the MEMS bridge, near the signal line. Using these electrodes, it is possible to generate two different phase states employing the MEMS bridge, and the third state is produced by a metal-air-metal (MAM) bridge. Hence, the designed structure can generate three different phase shifts per unit cell (i.e., 5.625 , 11.25 , and 22.5 phase shifts). The novelty of this design is that the number of unit cells is considerably reduced from 64 in a conventional six-bit phase shifter to only 17 in our design. Therefore, the total length of the six-bit phase shifter and average loss are considerably reduced. The designed structure is calculated and simulated at 32 GHz using MATLAB and ANSOFT HFSS, respectively. According to the calculation and simulation results, the lateral size of the phase shifter is only 8.5 mm, the root mean square (RMS) phase error is 1.38 , and the average loss is 1.1 dB. The feasibility of the proposed design is investigated using the proposed fabrication process. The designed phase shifter can be easily scaled to other frequencies for radar and satellite applications with more bits. K E Y W O R D S DMTL phase shifter, phased array antennas, return loss, unit cell 1 | INTRODUCTION Radio frequency (RF) microelectromechanical systems (MEMS) as a new interesting area in MEMS technology enable us to design and use high-performance devices and systems for broadband communication applications. 1-3 In recent years, nano-electromechanical systems (NEMS) have also developed and have found some new applications. 4-10 RF MEMS-based devices include switches, inductors, capacitors, varactors, and phase shifters. Phase shifters are the main components of the phased array antennas for radar applications and are classified into analog and digital types. 11-14 Analog MEMS phase shifters change the phase from 0 to 360 continuously, and their structure contains MEMS varactors. 15 Digital MEMS phase shifters contain only a discrete set of phase shifts and usually employ MEMS

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A wide range, high yield and good performance pHEMT switch for MMIC phase shifter

Cited by 8 publications

References 5 publications

A wide range monolithic pHEMT SPDT switch

A wide range monolithic pHEMT SPDT switch

Design of 2.5-3.3 GHz high-precision compact digital phase shifter

A low‐loss compact six‐bit DMTL phase shifter for phased array antenna applications

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