A Wideband Circularly Polarized Endfire Microstrip Antenna

Bharathi, A.; Merugu, Lakshminarayana

doi:10.1109/indicon52576.2021.9691536

Cited by 3 publications

(1 citation statement)

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“…The employment of on-chip antennas offers significant advantages in developing highly integrated transceiver systems by utilizing complementary metal–oxide–semiconductor (CMOS) technology. For example, an antenna having an artificial magnetic conductor (AMC)-based wide-slot squared design has been seamlessly integrated at 60 GHz [ 12 ]. In simulations, this integrated antenna exhibited a gain of approximately −2.1 dBi.…”

Section: Introductionmentioning

confidence: 99%

On-Chip Circularly Polarized Circular Loop Antennas Utilizing 4H-SiC and GaAs Substrates in the Q/V Band

Asfour,

Khamas,

Ball

et al. 2024

Sensors

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This paper presents a comprehensive assessment of the performance of on-chip circularly polarized (CP) circular loop antennas that have been designed and fabricated to operate in the Q/V frequency band. The proposed antenna design incorporates two concentric loops, with the outer loop as the active element and the inner loop enhancing the CP bandwidth. The study utilizes gallium arsenide (GaAs) and silicon carbide (4H-SiC) semiconductor wafer substrates. The measured results highlight the successful achievement of impedance matching at 40 GHz and 44 GHz for the 4H-SiC and GaAs substrates, respectively. Furthermore, both cases yield an axial ratio (AR) of less than 3 dB, with variations in bandwidths and frequency bands contingent upon the dielectric constant of the respective substrate material. Moreover, the outcomes confirm that utilizing 4H-SiC substrates results in a significantly higher radiation efficiency of 95%, owing to lower substrate losses. In pursuit of these findings, a 4-element circularly polarized loop array antenna has been fabricated for operation at 40 GHz, employing a 4H-SiC wafer as a low-loss substrate. The results underscore the antenna’s remarkable performance, exemplified by a broadside gain of approximately 9.7 dBic and a total efficiency of circa 92%. A close agreement has been achieved between simulated and measured results.

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Section: Introductionmentioning

confidence: 99%