A Wideband Digital TV Receiver front-end with On-chip Notch Filter

Jeon, Yangji; Yoon, Sung Wook; Kim, Changyeol; Moon, Hee-Sung; Nam, Ilku

doi:10.23919/elinfocom.2019.8706443

Cited by 6 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The performance comparison with previously reported designs is listed in Table 4. By comparing to other literatures (Heymann1 et al , 2016; Kulyk et al , 2015; Kulatunga et al , 2018; Wang et al , 2015; Huang et al , 2018; Watcharasatienpan and Janpugdee, 2019; Torres Costa et al , 2019; Pakasiri et al , 2019; Tiwari and Mukherjee, 2019; Zhang et al , 2018; Jeon et al , 2019; Shirani Bidabadi Sayed Vahid Mir-Moghtadaei, 2020; Sotskov et al , 2020; Laaouane et al , 2021), it is observed that the proposed LNA has FoM 23.8 which is higher than previously reported designs. Therefore, it is clearly confirmed that the proposed RC feedback network and interstage matching design techniques contribute to attaining high gain, good linearity and low NF.…”

Section: Performance Comparison With Existing State Of Artmentioning

confidence: 58%

“…In Zhang et al (2018), differential CS LNA with current reuse technique to attain high gain, broad bandwidth with good linearity and cancels noise partially, however, it has low gain and high NF. In Jeon et al (2019), cascode LNA with RC shunt feedback and on-chip notch filter is used to achieve good gain but it has high NF. In Shirani Bidabadi Sayed Vahid Mir-Moghtadaei (2020), CMOS-based LNA used the combination of resistive feedback, inductive series peaking and noise cancelling techniques to improve input matching, wideband, gain and reduce NF, but it has low gain and high NF compared to the HEMT-based LNA.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

An ultra-low noise pseudomorphic high electron mobility transistor (pHEMT)-based low noise amplifier using low temperature co-fire ceramic (LTCC) technique

Subburaman¹,

Sundharajan²

2021

View full text Add to dashboard Cite

Purpose This study aims to present two stage pseudomorphic high electron mobility transistor-based low noise amplifier (LNA) designed using low temperature co-fire ceramic (LTCC) technique for ultra-high frequency (UHF) band. The LNA operates in the frequency range of (400∼500) MHz which is suitable for wireless communication applications. Design/methodology/approach This LNA uses resistive capacitive (RC) feedback in the first stage to have wide bandwidth and interstage network for gain enhancement. By using external RC feedback, stability is improved and noise matching in the input stage is isolated by decoupling inductor. The excellent performance parameters including gain, noise figure (NF), wideband and linearity are attained without affecting the power consumption, compactness and cost of the proposed design. Findings Simulation is carried out using advanced design software and the result shows that gain of 33.7 dB, NF 0.416 dB and 1 dB compression point (P1dB) of 18.59 dBm are achieved with a supply voltage of 2.5 V. The return loss of input and output are −19.3 dB and −10.5 dB, respectively. From the above aforementioned parameters, it is confirmed that the proposed LNA is a promising candidate for receivers where high gain and very low NF are always demandable with good linearity for applications operating in the UHF band. Originality/value The innovation of the proposed LNA is that the concurrent attainment of high gain, low NF, wideband, optimum input matching, good stability by RC feedback and interstage network using LTCC technique to achieve robustness, low cost and compactness to prove the applicability of design for wireless applications.

show abstract