A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

Song, Weijie; Yoshitake, Michiko

doi:10.1002/sia.2228

Cited by 12 publications

(7 citation statements)

References 14 publications

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“…The WF of ultra-thin Al 2 O 3 over-layers decreased with subsequent 2-10-cycle ALD deposition and shifted to 4.4 eV after the 10-cycle ALD deposition process. A similar trend was found in [27], where the interfacial dipole layers were regarded as the main factor that determined the 5.…”

Section: Resultssupporting

confidence: 79%

Interfacial energy levels and related properties of atomic-layer-deposited Al₂O₃films on nanoporous TiO₂electrodes of dye-sensitized solar cells

et al. 2009

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Low-temperature (approximately 150 degrees C), atomic-layer-deposited Al(2)O(3) films on nanoporous TiO2 electrodes of dye-sensitized solar cells (DSSCs) were investigated using electron spectroscopy. The power conversion efficiency (PCE) of the DSSCs was increased from 5.7% to 6.5%, an improvement of 14%, with one monolayer of Al(2)O(3) with a thickness of approximately 0.2 nm. The formation of Ti-O-Al(OH)(2) and interfacial dipole layers exhibited a strong influence on the work function of the Al(2)O(3) over-layers, while the thicker Al(2)O(3) over-layers caused the values of valence band maximum and band gap to approach the values associated with pure Al(2)O(3). A work function difference (Delta Phi(A-T)) of 0.4 eV and a recombination barrier height (epsilon(RB)) of 0.1 eV were associated with the highest PCE achieved by the first monolayer of the Al(2)O(3) layer. Thicker Al(2)O(3) over-layers, however, caused significant reduction of PCE with negative Delta Phi(T-A) and increased interfacial energy barrier height ((*)epsilon(IB)) between the N719 dyes and TiO2 electrodes. It was concluded that the PCE of the DSSCs may correlate with Delta Phi(A-T), epsilon(RB), and (*)epsilon(IB) resulting from various thicknesses of the Al(2)O(3) over-layers and that interfacial reactions, such as the formation of Ti-O-Al(OH)(2) and dipole layers, play an important role in determining the interfacial energy levels required to achieve optimal performance of dye-sensitized TiO2 solar cells.

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Section: Resultssupporting

confidence: 79%

Interfacial energy levels and related properties of atomic-layer-deposited Al₂O₃films on nanoporous TiO₂electrodes of dye-sensitized solar cells

et al. 2009

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“…While it is reported for an Si/SiO 2 system with very thin oxide layers that the peak position of an Si core level line shifts 0.4 eV or more due to image charges, [15] thin-layer effects reported in other systems like Al/Al 2 O 3 are much smaller (0.1-0.2 eV). [16] If such a small shift were present, it would be within the experimental error.…”

Section: Resultsmentioning

confidence: 94%

Unraveling the oxidation of Ru using XPS

Ernst

Sloof

2008

Surface & Interface Analysis

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A method is presented to analyze XPS spectra recorded from thin (<5 nm) oxide layers with known thickness on corresponding metal substrates. With this method, the contribution of the oxide overlayer can be separated from the metal substrate for the metal core level line, even when the difference in binding energy between metallic and oxidic electrons is small. This method involves the fitting of Doniach-Sunjic (DS) line shapes for the metallic and oxidic state to the measured spectrum, where the area ratio between the metallic and oxidic contribution is fixed through the known thickness.The method was applied to ruthenium single crystals with a (0001) surface that were oxidized in a ultra-high vacuum (UHV) chamber at a temperature of 673 K and an oxygen pressure between 1×10 −4 and 1×10 −2 Pa. Analysis of the oxidic contribution to the Ru 3p 3/2 line shows that two different types of oxides can be formed in the oxidation process.

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“…), formation of the Fermi edge allowed us to calculate the WF. We use the following relation: WF = hν − ( E cut‐off − E F ), where E F is the Fermi energy . After heating at 500 °C the WF of the system was 5 eV.…”

Section: Resultsmentioning

confidence: 99%

TiO thin films on GaN(0001)

Wasielewski

Mazur

Grodzicki

et al. 2015

Physica Status Solidi (b)

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Physical features of titanium monoxide layers deposited on pGaN(0001) substrate are reported in this paper. TiO was deposited under ultrahigh vacuum at room temperature. As revealed by scanning tunneling microscopy (STM) the deposit had grainy structure. The X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) studies have shown that, depending on the altered by annealing morphology of the TiO-based film, work function of the system underwent changes and electronic structure of the deposit displayed metallic character. The formation of specific Ti-N and O-N bonds is confirmed by spectroscopic techniques. Electrical conductance of the TiObased/p-GaN interface has been studied by current-sensing atomic force microscopy (CS-AFM) with Au-covered tip. Formation of ohmic nano-contacts on p-GaN surfaces was observed over whole probed surface. The contacts were homogeneous in contrast to the grainy structure of TiO-based film. The results suggest that TiO may be considered as an intermediate semiconducting layer (ISL) useful for p-GaN electrical contact engineering.

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A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

Cited by 12 publications

References 14 publications

Interfacial energy levels and related properties of atomic-layer-deposited Al₂O₃films on nanoporous TiO₂electrodes of dye-sensitized solar cells

Interfacial energy levels and related properties of atomic-layer-deposited Al₂O₃films on nanoporous TiO₂electrodes of dye-sensitized solar cells

Unraveling the oxidation of Ru using XPS

TiO thin films on GaN(0001)

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A work function study of ultrathin alumina formation on Cu‐9%Al(111) surface

Cited by 12 publications

References 14 publications

Interfacial energy levels and related properties of atomic-layer-deposited Al2O3films on nanoporous TiO2electrodes of dye-sensitized solar cells

Interfacial energy levels and related properties of atomic-layer-deposited Al2O3films on nanoporous TiO2electrodes of dye-sensitized solar cells

Unraveling the oxidation of Ru using XPS

TiO thin films on GaN(0001)

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Resources

About

Interfacial energy levels and related properties of atomic-layer-deposited Al₂O₃films on nanoporous TiO₂electrodes of dye-sensitized solar cells

Interfacial energy levels and related properties of atomic-layer-deposited Al₂O₃films on nanoporous TiO₂electrodes of dye-sensitized solar cells