IEEE MTT-S International Microwave Symposium Digest, 2003
DOI: 10.1109/mwsym.2003.1212611
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A zero-bias single-device balanced E-PHEMT mixer with conversion gain for RFID applications

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Cited by 5 publications
(4 citation statements)
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“…The two-strip antennas consist of an Sstrip and a T-strip, and have no shorting via in the antenna structures. These antennas made use of the concepts of double-T antenna [3], inverted FL antenna [4], electromagnetic coupling, and two-strip configuration [5,6]. Owing to the strong EM coupling between strips, these two-strip antennas have the advantages of not just light-weight and compact but also have the monopole-like radiation patterns with wide dual-band operations.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The two-strip antennas consist of an Sstrip and a T-strip, and have no shorting via in the antenna structures. These antennas made use of the concepts of double-T antenna [3], inverted FL antenna [4], electromagnetic coupling, and two-strip configuration [5,6]. Owing to the strong EM coupling between strips, these two-strip antennas have the advantages of not just light-weight and compact but also have the monopole-like radiation patterns with wide dual-band operations.…”
Section: Discussionmentioning
confidence: 99%
“…The bias points of the active mixer transistors were optimized to maximize the efficiency and to obtain an adequate conversion gain. For the FETs of the resistive mixer, the bias point should be adjusted to minimize the conversion loss [5].…”
Section: Up and Down Converter Circuitsmentioning
confidence: 99%
“…The LO signal forces a time-varying transconductance waveform, being gain conversion proportional to the absolute value of its first order Fourier coefficient, G m 1 . At V DS ϭ 0V and for low LO power levels, this parameter has a maximum at the V GS position of maximum G md , with G md ϵ ѨG m /ѨV ds [7]. When increasing P LO , however, the first order Fourier coefficient grows while its maximum gets wider and is shift toward lower voltage values.…”
Section: Ephemt As Drain Mixermentioning
confidence: 99%
“…A 180 • hybrid connection of the drain and source terminals to the RF and IF signal ports was there employed, reducing this way the problems associated with device pairing. Based on that work, the authors proved in [12] the potentiality of a singledevice singly-balanced E-PHEMT drain mixer for providing conversion gain at V GS = V DS = 0 V. A lab model was then constructed and tested, and a 4.17 dB conversion gain was measured at an 8.5 dBm LO power level.…”
Section: Single-device Dual-mode Topologymentioning
confidence: 99%