2018
DOI: 10.1021/acs.inorgchem.8b01161
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A Zero-Dimensional Mixed-Anion Hybrid Halogenobismuthate(III) Semiconductor: Structural, Optical, and Photovoltaic Properties

Abstract: In this contribution, we present the synthesis and characterization of the mixed-anion halogenobismuthate(III) (CHNH)BiICl (MBIC) as an alternative lead-free perovskite-type semiconductor, and discuss its optical, electronic, and photovoltaic properties in comparison to the methylammonium bismuth iodide (CHNH)BiI (MBI) compound. The exchange of iodide with chloride during synthesis leads to the formation of an orthorhombic ABX-type crystal structure ( Cmma, No. 67) with isolated BiX octahedra and methylammoniu… Show more

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Cited by 26 publications
(19 citation statements)
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“…XPS Bi 4f7/2 core-level shows that metallic bismuth (peaks at 157.0 eV) is present (Figure 3d). The reduction of metallic bismuth has been reported to be a consequence of X-ray irradiation [29,30]. The most likely mechanism for this is analogous to reported Pb 0 evolution from MAPbI3 under the XPS environment, that is X-ray induced photolysis of any metal halide salts present in the film (PbI2 in the reported case, or BiI3 in our case).…”
Section: Resultssupporting
confidence: 77%
“…XPS Bi 4f7/2 core-level shows that metallic bismuth (peaks at 157.0 eV) is present (Figure 3d). The reduction of metallic bismuth has been reported to be a consequence of X-ray irradiation [29,30]. The most likely mechanism for this is analogous to reported Pb 0 evolution from MAPbI3 under the XPS environment, that is X-ray induced photolysis of any metal halide salts present in the film (PbI2 in the reported case, or BiI3 in our case).…”
Section: Resultssupporting
confidence: 77%
“…The stronger the non-covalent (hydrogen) bond is, the higher the mobility should be. In (HpipeH 2 ) 2 Bi 2 I 10 ·2H 2 O, very strong hydrogen bonds provoke reduction of the band gap from 2.0–2.2 eV, typical for compounds built of 0D Bi/I anions [ 53 , 54 ], to as low as 1.8 eV. The latter ensures efficient absorption of the solar light, which is favorable for the creation of light-harvesting materials for new solar cells.…”
Section: Resultsmentioning
confidence: 99%
“…2b,d). The presence of a non-uniform, inhomogeneous surface coverage would lead to the presence of pinholes, which are the cause of short-circuits and defect sites limiting the photovoltaic performance 34 . Therefore, the presence of a complete coverage would reduce the probability of shunting by an improved separation between the electron and the hole transport layer 35 .…”
Section: Resultsmentioning
confidence: 99%