2022
DOI: 10.1039/d2qi01517j
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A ZnO/ZnFe2O4 n–n heterojunction and Au loading synergistically improve the sensing performance of acetone

Abstract: In this work, Au nanoparticle-loaded ZnO/ZnFe2O4 (Au-ZnO/ZnFe2O4) microspheres were prepared using a combination of a two-step hydrothermal process and co-precipitation method. The SEM and TEM analyses showed that the synthesized...

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Cited by 13 publications
(12 citation statements)
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“…The mechanism behind the VOC-induced resistance modification of an n-type semiconductor material has been attributed to the adsorption and reactions of gas molecules occurring on the surface of the semiconductor materials. ,, When the sensor is placed in air, oxygen molecules are adsorbed on the surface of the sensor. They capture electrons from the conduction band of ZnO and increase its electrical resistance.…”
Section: Mechanismsmentioning
confidence: 99%
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“…The mechanism behind the VOC-induced resistance modification of an n-type semiconductor material has been attributed to the adsorption and reactions of gas molecules occurring on the surface of the semiconductor materials. ,, When the sensor is placed in air, oxygen molecules are adsorbed on the surface of the sensor. They capture electrons from the conduction band of ZnO and increase its electrical resistance.…”
Section: Mechanismsmentioning
confidence: 99%
“…Resistance-based gas sensors are becoming one of the most widely used sensors because they are sensitive and portable and can be easily minimized. Temperature considerably affects the performance of semiconductor-based gas sensors. Increasing the temperature increases the amount of energy available for crossing the activation barrier for initiating the response reaction, changing the adsorbed oxygen species, , transferring the adsorption types, , and increasing the reaction rate and gas desorption …”
Section: Introductionmentioning
confidence: 99%
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