The molecular structure and bonding mechanisms of
MH3
• radicals and MH3Cl (M
= C,
Si, Ge, Sn) have been studied with the use of local (LDA) as well as
nonlocal (NL-SCF)
density-functional theory (DFT) and a large, doubly polarized
triple-ζ STO basis (TZ2P).
The CH3
• radical is planar
(D
3h
) whereas the heavier central
atom analogs are pyramidal:
the H−M−H bond angle β (=120.00, 112.66, 112.44, 110.56°)
decreases, and the inversion
barrier ΔE
inv + ΔZPE (=0.0, 3.7, 3.8,
7.0 kcal/mol) increases along the series
CH3
•,
SiH3
•,
GeH3
•, and SnH3
•
(NL-SCF/TZ2P). The homolytic M−Cl bond dissociation energy
D
homo +
ΔZPE is 81.7, 105.6, 96.2, and 93.6 kcal/mol for
CH3−Cl, SiH3−Cl, GeH3−Cl, and
SnH3−Cl,
respectively (NL-SCF/TZ2P). A detailed analysis of the bonding
mechanisms shows that
the CH3
• radical is planar because of the
steric repulsion between the hydrogen ligands.
This steric H−H repulsion is much weaker for
SiH3
•, GeH3
•, and
SnH3
• in which the ligands
are farther removed from each other. Electronic effects (i.e.
electron pair bonding between
the central atom and hydrogen ligands) always favor a pyramidal
structure, although only
slightly so for the methyl radical. The analysis of the
MH3−Cl bond reveals that initially
the bond strength increases with the increasing M−Cl
electronegativity difference (from M
= C to Si) and then decreases together with the bond overlap between
the MH3
• and Cl•
SOMOs (from Si to Sn). The results are discussed in the context of
those previously obtained
for the complementary series of the CH3−X bond (X = F,
Cl, Br, I) to provide a more complete
insight into the electronic structure and bonding of the archetype
MH3X molecule.