The origin and assignment of the complex main and satellite
X-ray
photoelectron spectroscopy (XPS) features of the cations in ionic
compounds have been the subject of extensive theoretical studies using
different methods. There is agreement that within a molecular orbital
model, one needs to take into account different types of configurations.
Specifically, those where a core electron is removed, but no other
configuration changes are made and those where in addition to ionization,
there are also shake or charge-transfer changes to the ionic configuration.
However, there are strong disagreements about the assignment of XPS
features to these configurations. The present work is directed toward
resolving the origin of main and satellite features for the Ni 2p
XPS of NiO based on ab initio molecular orbital wave functions (WFs)
for a cluster model of NiO. A major problem in earlier ab initio XPS
studies of ionic compounds has been the use of a common set of orbitals
that was not able to properly describe all the ionic configurations
that contribute to the full XPS spectra. This is resolved in the present
work by using orbitals that are optimized for averages of the occupations
of the different configurations that contribute to the XPS. The approach
of using state-averaged (SA) orbitals is validated through comparisons
between different averages and through use of higher order excitations
in the WFs for the ionic states. It represents a major extension of
our earlier work on the main and satellite features of the Fe 2p XPS
of Fe2O3 and proves the reliability and the
generality of the assignments of the character and origin of the different
features of the XPS obtained with orbitals optimized for SAs. These
molecular orbital methods permit the characterization of the ionic
states in terms of the importance of shake excitations and of the
coupling of ionization of 2p1/2 and 2p3/2 spin–orbit
split sub shells. The work lays the foundation for definitive assignments
of the character of main and satellite XPS features and points to
their origin in the electronic structure of the material.