Lift-off is one of the last steps in the production of next-generation flexible electronics. It is important that this step is completed quickly to prevent damage to ultrathin manufactured electronics. This study investigated the chemical structure of polyimide most suitable for the Xe Flash lamp–Lift-Off process, a next-generation lift-off technology that will replace the current dominant laser lift-off process. Based on the characteristics of the peeled-off polyimide films, the Xe Flash lamp based lift-off mechanism was identified as photothermal decomposition. This occurs by thermal conduction via light-to-heat conversion. The synthesized polyimide films treated with the Xe Flash lamp–Lift-Off process exhibited various thermal, optical, dielectric, and surface characteristics depending on their chemical structures. The polyimide molecules with high concentrations of –CF3 functional groups and kinked chemical structures demonstrated the most promising peeling properties, optical transparencies, and dielectric constants. In particular, an ultra-thin polyimide substrate (6 μm) was successfully fabricated and showed potential for use in next-generation flexible electronics.